Allicdata Part #: | 296-46080-2-ND |
Manufacturer Part#: |
CSD18504Q5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CHANNEL 40V 50A 8VSON |
More Detail: | N-Channel 40V 50A (Ta) 3.1W (Ta), 77W (Tc) Surface... |
DataSheet: | CSD18504Q5AT Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1656pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD18504Q5AT belongs to a type of transistor called a Field Effect Transistor (FET). A FET is similar to a bipolar transistor, but it has three terminals instead of two. The three terminals are the source (S), the drain (D) and the gate (G). The CSD18504 Q5AT is a type of FET known as an enhancement-mode vertical MOSFET (Metal-Oxide Semiconductor FET).
The main application areas for the CSD18504Q5AT are in Power Management and Automotive applications. It is typically used in applications where high-side switching of large DC loads is needed, such as in motor control, lighting systems and automotive application control. It is also well-suited for use in AC-DC rectification and low-frequency power conversion. The CSD18504Q5AT offers very low on-state resistance, high current and high-frequency switching capabilities, making it an attractive solution for many power management functions.
The working principle of the CSD18504Q5AT is similar to that of any other FET. The gate terminal is used to control the flow of current between the source and the drain, by changing the voltage on the gate. When voltage is applied to the gate terminal, it causes a channel to form between the source and the drain. This allows current to flow between the source and the drain.
The CSD18504Q5AT is a vertical MOSFET, which means that the gate is located perpendicular to the source and drain terminals. This arrangement allows the FET to be very small, while still having a large current-handling capability. The CSD18504Q5AT offers an Rds(on) of 2.5 mΩ, which is a measure of the resistance in the device when the gate voltage is applied. This makes the FET appropriate for switching heavy loads with low power losses.
The CSD18504Q5AT is rated for maximum drain-source voltages of 30V and currents of up to 5A. It is also rated for a maximum switching frequency of 30MHz, which makes it suitable for high-speed applications. It has a thermal resistance of 15C/W, which is important for devices that are switching large amounts of power, since it limits the amount of heat generated in the device.
In summary, the CSD18504Q5AT is a type of vertical MOSFET, designed to be used in applications where high-side switching of large DC loads is required. It offers very low on-state resistance, high current and high-frequency switching capabilities. It is typically used in power management and automotive applications. The working principle of the FET is similar to that of any other, with the gate controlling the flow of current between the source and the drain, by changing the voltage on the gate.
The specific data is subject to PDF, and the above content is for reference
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