Allicdata Part #: | 296-27233-2-ND |
Manufacturer Part#: |
CSD17313Q2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 5A 6SON |
More Detail: | N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WS... |
DataSheet: | CSD17313Q2 Datasheet/PDF |
Quantity: | 1630 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WSON (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 15V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD17313Q2 is a single pole double throw (SPDT) field-effect transistor (FET). It is mainly used in signal switching, phase shifting or phase control applications. Furthermore, CSD17313Q2 can also be used as an amplifier or a buffer for driving medium power devices.
The primary advantage of using field-effect transistors, such as the CSD17313Q2, is that they require very little power to switch or drive a load. The FETs can also easily be switched between two voltage states without high power spikes and without dissipating any of the energy in the switching process.
The application and working principle of the CSD17313Q2 can be simplified into two parts. The first part is the actual switch, which requires a very small power input to control a relatively large load current. The other part is the amplifier, which requires a relatively large power input to control a small load current.
The CSD17313Q2 is comprised of two MOSFETs, a source MOSFET and a drain MOSFET. When a positive voltage is applied to the gate of the source MOSFET, current will flow through it. This in turn will activate the drain MOSFET, which will enable current to flow from it through the source MOSFET. This enables the CSD17313Q2 to act as a switch, allowing it to be used in applications such as signal switching, phase shifting or phase control.
For amplifier applications, the CSD17313Q2 works by using negative feedback. When a low or negative voltage is applied to the gate of the source MOSFET, it will reduce the current flow through the device and restrict the current flow to a certain level. This effectively limits the amount of current flow through the drain MOSFET to a certain level, allowing the CSD17313Q2 to be used as an amplifier.
The CSD17313Q2 is also capable of providing high-voltage transient protection by using its high-voltage breakdown capability. This is achieved by the gate-to-source breakdown voltage of the MOSFETs, which is typically around 90V. This means that any unwanted high-voltage transients will be diverted away from the device itself, protecting the components from unwanted voltage spikes.
In conclusion, the CSD17313Q2 is an ideal device for applications in signal switching, phase shifting, phase control, and amplification. It provides low power switching capabilities, low voltage transient protection and high voltage breakdown capability, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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