CSD17306Q5A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CSD17306Q5A is a kind of power transistor module with excellent switching capability and high system efficiency. CSD17306Q5A application field mainly includes power management, lighting control, telecom and power generation, automotive, industrial and IT applications. A broad range of sizes, trigger and drive levels and packaging selection are offered to meet the requirements of applications. CSD17306Q5A contains five single N-channel 600V CoolMOS power transistor. This module is specially designed for switching power supplies and other high-side load applications.

CSD17306Q5A belongs to single MOSFETs, which are MOSFETs controlled by a single gate. The working principle of MOSFETs is very simple. The metal oxide semiconductor field-effect transistor (MOSFET) is a three-terminal device with a source, a drain, and a gate. Both source and drain are heavily doped (N-type or P-type) and connected to external circuits, while the gate terminal is an insulated gate connected to an input voltage. Under the action of the electric field, the electrons in the source and the drain are scattered, resulting in the output current flowing through the device.

The current-carrying characteristic of the MOSFET is determined by the threshold voltage, which is the voltage used to control the current-carrying capability of the device. The critical field for electrons to enter the drain is much larger than the threshold voltage. When the applied voltage between the gate terminal and the source is greater than the threshold voltage, the electrons entering the drain increase rapidly, and the current flowing through the device increases drastically. In other words, the gate voltage is used to create a controlled electric field that controls the density of electrons in the region near the drain which increases the current flowing through the device.

The basic operation of CSD17306Q5A is the same as that of any other single MOSFETs. When operating, an input signal is applied to the gate terminal and then the two-terminal resistance of the device is controlled. When the gate voltage exceeds the threshold voltage, a channel between drain and source is created and the current-voltage characteristic of the device is determined. When the gate voltage reaches the operating voltage, the device is in saturation region and the effective on-state resistance of the device is minimal.

In summary, CSD17306Q5A belongs to single MOSFETs and its application field mainly includes power management, lighting control, telecom and power generation, automotive, industrial and IT applications. Its operation principle is to create an electric field to control the density of electrons near the drain, which increases the current flowing through the device when the gate voltage is greater than the threshold voltage.

The specific data is subject to PDF, and the above content is for reference