CSD17573Q5BT Allicdata Electronics
Allicdata Part #:

296-47320-2-ND

Manufacturer Part#:

CSD17573Q5BT

Price: $ 0.96
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 100A 8VSON
More Detail: N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surfa...
DataSheet: CSD17573Q5BT datasheetCSD17573Q5BT Datasheet/PDF
Quantity: 250
1 +: $ 0.96000
10 +: $ 0.93120
100 +: $ 0.91200
1000 +: $ 0.89280
10000 +: $ 0.86400
Stock 250Can Ship Immediately
$ 0.96
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON-CLIP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 195W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 1 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD17573Q5BT is a product from Texas Instruments. It is a single N-channel power MOSFET, a type of transistor. It is a high side switch with a 60V voltage rating. As an N-channel power MOSFET, it is able to handle high power with low on-resistance, making it ideal for applications requiring high-power density. The CSD17573Q5BT operates in the same way as an N-channel MOSFET, by utilising an electric field to control current flow.

This MOSFET is constructed with an insulated-gate field effect transistor (IGFET) configuration. The source and body of the transistor are electrically connected, and the drain is connected to the gate. The gate can be positively or negatively charged, allowing current to passage through. When the gate voltage is above the threshold voltage, a channel is created within the transistor, allowing current to flow from the source to the drain. When the gate voltage is equal to the threshold voltage, the current flow is regulated.

The CSD17573Q5BT is designed for high-side switching applications, capable of moving up to 60V of power. It can be used in a wide variety of circuits, such as those for power supplies, motor control, and lighting systems. The design of the CSD17573Q5BT allows it to be used in systems requiring both high-precision and high-power applications.

The advantages of the CSD17573Q5BT over other types of transistors include its low on-resistance, its ability to handle high power with minimal losses, and its ability to provide precise control. Its low on-resistance allows it to dissipate less power, resulting in improved power efficiency. Additionally, its precise control over the current flow makes it ideal for applications requiring very precise power control.

The CSD17573Q5BT is a versatile and reliable transistor that is suitable for a wide range of high-power, high-precision applications. Its design allows it to handle up to 60V of power, making it an ideal switch for a wide variety of systems. Its low on-resistance, along with its ability to provide precise control, make it a highly efficient and reliable device.

The specific data is subject to PDF, and the above content is for reference

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