
Allicdata Part #: | 296-27792-2-ND |
Manufacturer Part#: |
CSD17510Q5A |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8SON |
More Detail: | N-Channel 30V 20A (Ta), 100A (Tc) 3W (Ta) Surface ... |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.39000 |
10 +: | $ 0.37830 |
100 +: | $ 0.37050 |
1000 +: | $ 0.36270 |
10000 +: | $ 0.35100 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CSD17510Q5A is a single N-channel enhancement Power MOSFET. This device is built with advanced processing techniques at Fairchild Semiconductor, utilizing its advanced PowerTrench® technology. It features low RDS (ON) with very low gate charge and fast switching speed. Specifically, the CSD17510Q5A is the N-channel enhancement type MOSFET with the lowest RDS (ON) among general purpose MOSFETs, making it suitable for a wide range of applications.
The application field of the CSD17510Q5A can range from low-power converters using ACDC, DCDC and DCAC converters as well as low-power loads such as auxiliary power supplies, LEDs and dragster applications to high-power converters using inverters and high-power loads such as motor drives, water pumps and other such applications. Furthermore, its low RDS (ON) makes it suitable for applications with high efficiency, such as in DC to RF converters or other power supplies.
In addition to its wide application field, the CSD17510Q5A also features a notable working principle. It is an enhancement mode MOSFET that is widely applied to a wide range of circuit designs. This is because they require no additional bias current to be turned on and they can switch quickly and efficiently. The low gate charge of the CSD17510Q5A, combined with the low RDS (ON), makes it an ideal choice for low-power converters thanks to its ability to be switched on quickly and efficiently.
The power MOSFET is typically used with a logic-level gate drive, allowing it to switch between the on and off states quickly and efficiently. This is possible due to its high input impedance, allowing it to remain in the off state for extended periods. Furthermore, its very low gate charge makes it suitable for high-current switching applications such as motor drives, inverters and other circuits that require the switching of large currents.
In conclusion, the CSD17510Q5A is a general-purpose enhancement mode Power MOSFET with a wide application field and a notable working principle. It is suitable for a range of circuits, thanks to its low RDS (ON) and low gate charge. Furthermore, its high input impedance allows it to remain in the off state for extended periods and is suitable for high-current switching applications.
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