CSD18540Q5B Allicdata Electronics

CSD18540Q5B Discrete Semiconductor Products

Allicdata Part #:

296-41076-2-ND

Manufacturer Part#:

CSD18540Q5B

Price: $ 1.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 60V 100A 8VSON
More Detail: N-Channel 60V 100A (Ta) 3.1W (Ta), 195W (Tc) Surfa...
DataSheet: CSD18540Q5B datasheetCSD18540Q5B Datasheet/PDF
Quantity: 5088
1 +: $ 1.08333
10 +: $ 0.93889
100 +: $ 0.75833
1000 +: $ 0.72222
10000 +: $ 0.68611
Stock 5088Can Ship Immediately
$ 1.08
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON-CLIP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD18540Q5B transistor is a specialized type of field-effect transistor (FET) that is commonly used in electrical and electronic applications. It is a single transistor device, meaning it consists of a single channel and is designed for use in high power applications. Typical uses for the CSD18540Q5B include circuits requiring high-speed switching, dynamic voltage regulation, and power amplification.

The primary structural feature of the CSD18540Q5B is its MOSFET design. MOSFET stands for metal-oxide-semiconductor field-effect transistor, and these transistors use a conductive channel between two insulating layers of oxide. The transistor operates by using the electric field generated between the two insulating layers to alter the conductivity of the channel, allowing electricity to flow through it. The structure of the CSD18540Q5B is designed to maximize the efficiency of current flow while minimizing power consumption.

At the heart of the design of the CSD18540Q5B is a junction gate field-effect transistor (JFET). JFET transistors are essentially three-terminal devices, having a gate, a source, and a drain. By applying a voltage to the gate, the current between the source and the drain is controlled. Depending on the type of JFET being used and the applied voltage, the current flowing through the channel can be increased or reduced, allowing for precision control in a wide variety of applications.

The CSD18540Q5B also uses self-aligning gate and drain contacts. These contacts are constructed from a semiconductor layer of low resistance, allowing for an efficient flow of current. The drain contact is also constructed with a low capacitance dielectric, which helps ensure that the transistor works optimally even under rapidly changing voltages. The combination of JFET and self-aligning gate and drain contacts makes the CSD18540Q5B ideal for high-speed switching and power conversion applications.

The CSD18540Q5B is typically used in applications that require fast switching speeds, such as automotive control systems, audio amplifiers, and wireless communications systems. It is also used in circuits that require dynamic voltage regulation, such as those found in high-end video cards or power supplies, or for power amplification in high-power applications. In addition, the CSD18540Q5B is suitable for use in consumer electronics and other digital circuitry, due to its low power consumption and low leakage current.

The CSD18540Q5B is a specialized type of FET designed for high-power applications. It uses a MOSFET design combined with a JFET and self-aligning gate and drain contacts to allow for fast switching speeds and precision current control. It is suitable for use in automotive control systems, wireless communications, audio amplifiers, power supplies, and other high-power applications. As such, it is an essential component in many types of electrical and electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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