Allicdata Part #: | 296-27625-2-ND |
Manufacturer Part#: |
CSD17311Q5 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8SON |
More Detail: | N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surfac... |
DataSheet: | CSD17311Q5 Datasheet/PDF |
Quantity: | 15000 |
2500 +: | $ 0.62792 |
5000 +: | $ 0.60467 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Vgs (Max): | +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 4280pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD17311Q5 is one of the most advanced single transistor devices available today. It is an advanced N-channel enhancement mode MOSFET, featuring an integrated SenseFET and a low RDS (on) of 153 mOhm at 10V. The CSD17311Q5 is designed to offer high precision and excellent power handling capabilities, making it an ideal solution for applications in automotive, consumer, and other markets.
In terms of its application field, the CSD17311Q5 is suitable for applications such as solar cell controllers, alarm systems, consumer equipment, industrial control, LED lighting, and motor control. It is also suitable for a range of industrial applications such as hot water systems, refrigeration systems, pumps, ventilation systems, and fans.
The CSD17311Q5 features a SenseFET to provide advanced current sensing capabilities. The SenseFET enables the device to accurately sense the current in the load and limit it to a predetermined value, thus reducing stress on the surrounding components. The device also features a low gate threshold voltage and an ultra-low drain-to-source resistance, allowing for efficient switching and low power losses.
When it comes to its working principle, the CSD17311Q5 is an enhancement-mode MOSFET. This means that, when the input voltage is applied to the gate, a conducting channel is created between the source and the drain. A voltage difference between the source and the drain causes a current to flow through the channel. The amount of current passing through this channel is determined by the amount of gate voltage applied to the device. To turn the device off, the gate voltage is reduced to a level below the threshold voltage.
In terms of its features and performance, the CSD17311Q5 has a very robust design and offers excellent power handling capabilities. Its low RDS (on) of 153 mOhm at 10V maximizes efficiency and minimizes thermal losses. Its low gate threshold voltage allows for excellent switching performance, while its low drain-to-source resistance provides improved thermal efficiency and reduced power losses. Additionally, its integrated SenseFET feature enables the device to accurately sense current in the load and limit it to a predetermined value, thus reducing stress on the surrounding components.
Overall, the CSD17311Q5 is a versatile, powerful, and reliable single transistor device that is highly suitable for a range of automotive, consumer, and other applications. It offers excellent precision, excellent power handling capabilities, and a low RDS (on). Its integrated SenseFET feature allows for accurate current sensing, and its low gate threshold voltage and low drain-to-source resistance enable excellent thermal efficiency and low power losses. The CSD17311Q5 is definitely a great choice for applications that require advanced power switching abilities.
The specific data is subject to PDF, and the above content is for reference
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