CSD13385F5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD13385F5 is a single N-channel enhancement mode (normally-off) field effect transistor (FET). Through advances in process technology,the CSD13385F5 has been designed to minimize gate charge and provide improved switching and low RDS(on). This FET family is an ideal choice for multiple power supply applications such as switch-mode power, converters, and DC-DC regulators.

The CSD13385F5 is an insulated-gate field effect transistor (IGFET) commonly known as a “MOSFET” (metal oxide semiconductor field effect transistor). The MOSFET is by far the most widely used semiconductor device for switching and amplifier applications due to its low cost, high input impedance, high speed and distortion-free operation. It is composed of a semiconductor body of N-type and a metal oxide gate, that can be electronically charged or discharged. To sum up, the CSD13385F5 FET is a universally used switch device.

The CSD13385F5 consists of a semiconductor substrate and a thin gate oxide layer. The source and drain regions are N-type silicon. This type of design allows efficient current flow through the source and drain with only small gate drive voltages and currents. In the “on” state, the MOSFET shares the majority of the drain current with the source. Thanks to its low gate charge, it helps reduce EMI.

The devices have an easy to drive gate, allowing for a wide range of operating voltage conditions and fast switching speeds; not to mention its low drain-source on-resistance and ultra-low leakage current. One of the most noteworthy features associated with the CSD13385F5 is its N-channel architecture. This makes it a must in applications that require high-speed switching. Furthermore, the integrated, low-capacitance ESD protection cell can provide up to 8 kV HBM ESD protection level.

The CSD13385F5 is a logical choice over discrete MOSFETs in applications, such as switch mode power supplies, solenoid and relay drivers, transformer drivers, and switching regulators. This FET can be found in diverse applications sectors including automotive, computer, consumer electronics and communication. As a matter of fact, it is the perfect weapon of choice to fight against heat loss, radiation and system noise.

Regardless of the application, the CSD13385F5 has demonstrated its superior electrical performance, attainable with a relatively low cost and its availability in space-saving surface-mount packages. Ultimately, this FET makes an ideal match for its low gate charge and low on-resistance.

The specific data is subject to PDF, and the above content is for reference