CSD18535KTTT Allicdata Electronics
Allicdata Part #:

296-44121-2-ND

Manufacturer Part#:

CSD18535KTTT

Price: $ 2.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 60V 200A TO-263
More Detail: N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surfa...
DataSheet: CSD18535KTTT datasheetCSD18535KTTT Datasheet/PDF
Quantity: 1000
1 +: $ 2.18000
10 +: $ 2.11460
100 +: $ 2.07100
1000 +: $ 2.02740
10000 +: $ 1.96200
Stock 1000Can Ship Immediately
$ 2.18
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: DDPAK/TO-263-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD18535KTTT is a part of the CSD18535 series of N-Channel STripFET II Power MOSFETs from Texas Instruments. The MOSFETs in this series is designed for use in power conversion, motor control, and switch-mode power supply applications. The N-Channel MOSFETs offer low on-state resistance, good high temperature operating characteristics, and power cycling capability.

The CSD18535KTTT has an N-channel, enhancement-mode MOSFET structure, which is a popular type of transistor switching circuit used by many other MOSFETs. The device is fabricated on an industry-standard-6-pin, corner-bondable, TO-220 substrate, giving it the capability of withstanding both high-temperature junction and inductive loads. The MOSFET is designed for use in numerous application fields where a low-cost on-state resistance gate-source voltage is required.

The CSD18535KTTT works on the principle of MOSFET transistor switching. It is a voltage-controlled device which uses a gate to control the flow of current between two terminals called source and drain. With the gate-source voltage set at zero, the device is considered to be in a “return-to-zero” state with no current flowing. In this state, the drain-source voltage is zero and the gate current is zero. The MOSFET can be activated by either increasing or decreasing the gate-source voltage, depending on the type of MOSFET.

When the gate-source voltage is increased above a certain threshold, the device will activate itself and current will flow from the drain to the source. This increased gate-source voltage will cause the depletion region of the PN-junction MOSFET to move towards the source and allow current from the source to be conducted to the drain. Alternatively, the decrease in gate-source voltage can be used to deactivate the device, which takes place when the threshold value is reduced below the initial value.

The CSD18535KTTT can be used for power conversion applications, including switching power supplies, load switching, and general-purpose power control. It can also be used for motor control applications such as motor speed control, motor start/stop control, and fan speed control. In addition, it can be used in switch-mode power supplies, DC-DC power supplies, and automotive applications.

In summary, the CSD18535KTTT is a type of N-channel MOSFET transistor switch from the CSD18535 series from Texas Instruments. It is designed for power conversion, motor control, and switch-mode power supply applications. The MOSFET works on the principle of MOSFET transistor switching and is activated or deactivated depending on the gate-source voltage. It is suitable for numerous application fields since it has a low-cost on-state resistance gate-source voltage. As a result, power conversion, motor control, and switch-mode power supply applications advantages of this versatile device.

The specific data is subject to PDF, and the above content is for reference

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