
Allicdata Part #: | 296-44121-2-ND |
Manufacturer Part#: |
CSD18535KTTT |
Price: | $ 2.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 60V 200A TO-263 |
More Detail: | N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.18000 |
10 +: | $ 2.11460 |
100 +: | $ 2.07100 |
1000 +: | $ 2.02740 |
10000 +: | $ 1.96200 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Supplier Device Package: | DDPAK/TO-263-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6620pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Ta), 279A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD18535KTTT is a part of the CSD18535 series of N-Channel STripFET II Power MOSFETs from Texas Instruments. The MOSFETs in this series is designed for use in power conversion, motor control, and switch-mode power supply applications. The N-Channel MOSFETs offer low on-state resistance, good high temperature operating characteristics, and power cycling capability.
The CSD18535KTTT has an N-channel, enhancement-mode MOSFET structure, which is a popular type of transistor switching circuit used by many other MOSFETs. The device is fabricated on an industry-standard-6-pin, corner-bondable, TO-220 substrate, giving it the capability of withstanding both high-temperature junction and inductive loads. The MOSFET is designed for use in numerous application fields where a low-cost on-state resistance gate-source voltage is required.
The CSD18535KTTT works on the principle of MOSFET transistor switching. It is a voltage-controlled device which uses a gate to control the flow of current between two terminals called source and drain. With the gate-source voltage set at zero, the device is considered to be in a “return-to-zero” state with no current flowing. In this state, the drain-source voltage is zero and the gate current is zero. The MOSFET can be activated by either increasing or decreasing the gate-source voltage, depending on the type of MOSFET.
When the gate-source voltage is increased above a certain threshold, the device will activate itself and current will flow from the drain to the source. This increased gate-source voltage will cause the depletion region of the PN-junction MOSFET to move towards the source and allow current from the source to be conducted to the drain. Alternatively, the decrease in gate-source voltage can be used to deactivate the device, which takes place when the threshold value is reduced below the initial value.
The CSD18535KTTT can be used for power conversion applications, including switching power supplies, load switching, and general-purpose power control. It can also be used for motor control applications such as motor speed control, motor start/stop control, and fan speed control. In addition, it can be used in switch-mode power supplies, DC-DC power supplies, and automotive applications.
In summary, the CSD18535KTTT is a type of N-channel MOSFET transistor switch from the CSD18535 series from Texas Instruments. It is designed for power conversion, motor control, and switch-mode power supply applications. The MOSFET works on the principle of MOSFET transistor switching and is activated or deactivated depending on the gate-source voltage. It is suitable for numerous application fields since it has a low-cost on-state resistance gate-source voltage. As a result, power conversion, motor control, and switch-mode power supply applications advantages of this versatile device.
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