Allicdata Part #: | CSD17576Q5BT-ND |
Manufacturer Part#: |
CSD17576Q5BT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8VSON |
More Detail: | N-Channel 30V 100A (Ta) 3.1W (Ta), 125W (Tc) Surfa... |
DataSheet: | CSD17576Q5BT Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4430pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD17576Q5BT is a single N-channel power MOSFET specifically designed for power management. This device is a flexible solution for many Power management applications using advanced Silicon-on-Insulator (SOI) technology. It combines the high current capability, low on-resistance and low gate threshold voltage of conventional MOSFETs, with the low voltage capabilities of semiconductor-on-insulator (SOI) technology.
The CSD17576Q5BT has applications in a wide range of power management fields, including DC-DC converters, voltage regulators, motor control, and power amplifiers. It is also used in many consumer electronics, appliances, and automotive electronics. This MOSFET is designed to handle high power and currrent densities, and offers excellent thermal performance in a wide range of operating conditions and temperatures.
The CSD17576Q5BT works using the principle of electron tunneling. The device consists of a source region and a drain region with a gate in between. The gate is metallized on the outsides, with a thin oxide layer between it and the source and drain regions. When a voltage is applied to the gate, it creates an electric field in the oxide layer, known as an inversion layer. The electrons are then pulled towards the source and drain regions, allowing current to flow. The characteristics of the MOSFET can then be determined by manipulating the electrical field in the oxide layer.
The CSD17576Q5BT is designed to handle a wide range of power and current density applications. It has an RDS-on resistance of 1.2 mOhms, a gate capacitance of 27 nF, a maximum power dissipation of 350 W and a maximum operating temperature of 175°C. These features allow it to handle even the most demanding power management applications with ease. Additionally, the device features an integrated temperature sensor, which allows for improved temperature monitoring and control.
The CSD17576Q5BT is a versatile device, offering exceptional performance and capability for a wide range of power management products. Its features and capabilities allow it to handle the most demanding applications, while offering improved thermal performance. The integrated temperature sensor allows for improved monitoring and control solutions for many applications, which makes it a great choice for any power management application.
The specific data is subject to PDF, and the above content is for reference
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