| Allicdata Part #: | 296-24252-2-ND |
| Manufacturer Part#: |
CSD16407Q5 |
| Price: | $ 0.61 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 25V 100A 8-SON |
| More Detail: | N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
| DataSheet: | CSD16407Q5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.61000 |
| 10 +: | $ 0.59170 |
| 100 +: | $ 0.57950 |
| 1000 +: | $ 0.56730 |
| 10000 +: | $ 0.54900 |
| Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSONP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 12.5V |
| Vgs (Max): | +16V, -12V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD16407Q5 is a specialized type of field-effect transistor (FET) known as a MOSFET. It is also referred to as a single-gate transistor, and it is widely used for voltage regulation and motor control applications. In this article, we will discuss the application field and working principle of the CSD16407Q5.
General Characteristics:
The CSD16407Q5 is a discrete MOSFET manufactured by Texas Instruments. It is a single-gate n-channel FET designed to operate at a drain-source voltage of 100 volts and a continuous drain current of 23.2 amps. The maximum power dissipation is 560 watts under a junction-to-ambient temperature, and the on-resistance is only 0.3 ohms.
Application Field:
The CSD16407Q5 is most commonly used in voltage regulator and motor control applications. It is suitable for applications that require high current throughput and robustness. As such, it is often used in automotive, industrial, and consumer electronics applications. It is also used in high-end gaming consoles, sound and audio amplifiers, and other motor control applications.
Working Principle:
The basic operating principle of the CSD16407Q5 is quite simple. Electrons are attracted by the positive gate voltage and are drawn from the source to the drain channel. As the channel between source and drain increases and decreases, the current between source and drain also increases and decreases accordingly. The voltage and current produced by the MOSFET is determined by the gate voltage and the on-resistance.
The CSD16407Q5 has a low on-resistance rating, which allows it to dissipate more power and have a shorter rise and fall time. This makes it ideal for high frequency applications. Compared to other FET types, it has a higher switching speed and lower on-resistance, which makes it suitable for fast switching applications.
Conclusion:
The CSD16407Q5 is a specialized type of MOSFET that is used for a variety of applications. Its basic operating principle is simple – electrons are attracted by the positive gate voltage and are drawn from the source to the drain channel. This allows for current to be regulated between source and drain, making it suitable for motor control and voltage regulation. With its low on-resistance, high frequency capability and faster switching times, the CSD16407Q5 is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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CSD16407Q5 Datasheet/PDF