CSD17581Q5AT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD17581Q5AT is an N-channel enhancement mode Field-Effect Transistor (FET) integrated silicon switch that is primarily used as an analog power switch or load switch. Developed by IXYS Corporation, this integrated silicon switch is primarily used in today’s power converters and power supplies, in addition to being used as a load switch in various applications, such as load switching and current regulation.

Application Field

The CSD17581Q5AT is a highly efficient integrated silicon switch with an avalanche rating of 500V, making it suitable for a wide variety of applications. It is primarily used in high-voltage, low-voltage, and motor control applications, such as motor controls, electronic switches, and AC-DC converters. This FET can also be used for over-voltage and over-current protection, and is highly suitable for use in power converters, power supply designs, and other high-power applications that require low ON-resistance and high switching speeds.

The compact, lightweight form factor and wide range of operating temperatures make it ideal for use in extreme environments, including automotive, industrial, and medical applications. In addition, the CSD17581Q5AT is fully RoHS compliant and offers high efficiency power consumption.

Working Principle

At its most basic level, a FET is a three-terminal device, with the source being the input, and the drain being the output. When the Gate is activated, the channel between the source and the drain is opened, which allows the current to flow between the two terminals. When the Gate is inactive, the channel is closed and the current is blocked.

The CSD17581Q5AT works in essentially the same way as a traditional FET. It uses a metal-oxide-semiconductor (MOS) structure to control current flow between the source and the drain. The base material is a layer of silicon, which is sandwiched between two gate electrodes. When voltage is applied to the gate, it attracts charge carriers, which fill the “box” between the gate and the source/drain. This creates a conductive channel, allowing the current to flow between the two terminals. When the voltage is removed from the gate, the charge carriers are removed, and the channel is blocked, which stops the current flow.

The CSD17581Q5AT is also equipped with an integrated pre-biased driver that helps to speed up the response time and reduce the amount of switching noise. This makes it well-suited for applications that require fast switching and high efficiency. It can handle currents up to 10 Amps, and voltages up to 55V.

Conclusion

The CSD17581Q5AT is an N-channel FET designed for use in high-voltage and low-voltage applications. This integrated silicon switch is highly efficient, with low ON-resistance and high switching speeds. It offers excellent performance in extreme environments, and is RoHS compliant. It also features an integrated pre-biased driver to help reduce switching noise and improve the response time of the device.

The specific data is subject to PDF, and the above content is for reference