CSD18531Q5A

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSONP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 156W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3840pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	4.6 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	19A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD18531Q5A is a leading high-voltage, logic-enhanced N-channel power MOSFET. This powerful device was strategically developed to address high-current, high-voltage switching applications in the automotive, industrial and consumer markets. CSD18531Q5A has a wide range of applications in different fields and is commonly used in motor drive controllers, DC/DC converters, battery management systems, motor control and automotive powertrain control applications.CSD18531Q5A belongs to the family of field-effect transistors (FETs). The FET is characterized by three terminals - gate (G), drain (D) and source (S). It is an voltage-controlled device which can be operated with an low-voltage signal. This makes it very suitable for controlling high-power operations. In addition to the three terminals, FETs are also provided with their own body diode for protection.MOSFETs (metal-oxide-semiconductor field-effect transistors) are a type of FETs which are preferred for their low on-state resistance (RDS (on)). As compared to other types of FETs, MOSFETs are preferred in most applications due to their higher switching speed and lower power dissipation. The CSD18531Q5A is a single N-channel MOSFET which is designed for operating at a maximum voltage of 55V. It offers a low on-state resistance of 8.9mΩ which helps to minimize overall power dissipation. In addition, it has a current handling capability of up to 25A and comes with a Schottky body diode for reverse current protection. To understand the working principle of the CSD18531Q5A, let’s first have a look at the basic principle of a MOSFET. A MOSFET is a voltage-controlled device, meaning that it can be turned “On” or “Off” depending on the voltage applied to the gate terminal. When no voltage is applied to the gate, the MOSFET is in the “Off” state, meaning that no current will flow between the source and the drain. When a voltage is applied to the gate, the MOSFET is in the “On” state and current will flow freely between the source and the drain. The CSD18531Q5A is an N-channel MOSFET which means that when no voltage is applied to the gate it is in the “On” state and current will flow freely between the source and the drain. To turn the MOSFET “Off”, a voltage must be applied to the gate, which will cause the MOSFET to enter the “Off” state, thus blocking any current flow between the source and the drain. The CSD18531Q5A is a low-power MOSFET designed for switching applications and hence must be operated in the “On” and “Off” states. The control of the CSD18531Q5A can be done either via a digital signal, such as from a logic voltage source, or via an analog signal, such as from a microcontroller or other analog control circuit.In conclusion, CSD18531Q5A is a high-voltage, logic-enhanced N-channel power MOSFET which is designed for switching high-current and high-voltage applications. It belongs to the family of field-effect transistors and have a low on-state resistance of 8.9 mΩ along with a Schottky body diode for protection. The device can be operated with a low voltage control signal and is suitable for use in motor drive controllers, DC/DC converters, battery management systems, motor control and automotive powertrain control applications.

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