Allicdata Part #: | 296-41075-2-ND |
Manufacturer Part#: |
CSD18509Q5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 40V 100A 8VSON |
More Detail: | N-Channel 40V 100A (Ta) 3.1W (Ta), 195W (Tc) Surfa... |
DataSheet: | CSD18509Q5B Datasheet/PDF |
Quantity: | 5000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13900pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD18509Q5B is an advanced MOSFET technology designed to fulfill the demands of a wide range of applications. This individual MOSFET device is part of an array of highly efficient power transistors used in many products. It has superior switching capability due to its low Rds(on) (resistance between drain and source) and low gate charge. The CSD18509Q5B is ideal for use in electric vehicles, heavy industrial equipment, fresh water applications, and many other automotive, commercial and industrial markets.
The CSD18509Q5B is a N-channel PowerTrench MOSFET. This device is especially designed for power drive and protection applications. It features a higher breakdown voltage, higher gate drive capability and lower Rds(on). It provides the user with superior switching performance in both single-ended and half-bridge configurations. This device is usually found in automotive powertrain systems, consumer products, military, medical and industrial markets.
The CSD18509Q5B utilizes a trench MOSFET process design. This MOSFET is made with an electrode structure which allows the device to control electric current while offering superior ESD (electrostatic discharge) protection. It also provides the user with enhanced thermal stability and lower gate-to-drain capacitance. This allows the device to work efficiently and with an extended lifetime.
The CSD18509Q5B works on the principle of voltage-controlled conduction. Its gate is driven by an external voltage source which, when applied to its gate, activates the device. When a positive gate voltage is applied, the device conducts current between its drain and source terminals. As voltage increases, the device will switch on more quickly and can support higher currents. When a negative gate voltage is applied, the device will switch off and will no longer conduct current.
The CSD18509Q5B has many applications. It is used in motors and motor control circuits as well as in servos, DC/DC converters, computers, and other domestic and industrial electronic devices such as machine controls, lighting systems and air conditioners. It is also used for remote control systems, telecommunication, and audio/video equipment. It is compatible with high speed, low power devices and can support high current, low voltage systems.
In conclusion, the CSD18509Q5B is a high performance N-channel PowerTrench MOSFET. This device is designed and manufactured to offer superior switching performance while consuming low power. In addition, this device has various applications in many electronic and industrial markets. From motor controls, servos, and DC/DC converters, to machine controls and lighting systems, this advanced device is a reliable and efficient choice for many power drive and protection applications.
The specific data is subject to PDF, and the above content is for reference
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