Allicdata Part #: | 296-24517-2-ND |
Manufacturer Part#: |
CSD16321Q5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 100A 8-SON |
More Detail: | N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
DataSheet: | CSD16321Q5 Datasheet/PDF |
Quantity: | 17500 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 12.5V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16321Q5 is a N-channel MOSFET (metal-oxide semiconductor field-effect transistor) designed for specific application fields. By changing the gate-source voltage, it controls the flow of current between the source and drain, acting as a switch for applications in both logic and power control circuits. Despite its relatively small package, the CSD16321Q5 has great power capabilities. It is rated at 650 volts and 5.3 amps, and can be used in a range of applications, including power supply and communications equipment.
The working principle of the CSD16321Q5 is quite simple. The source and drain regions are separated by an insulated layer or gate. To turn the transistor on or off, the gate voltage is used to control the current flow between these two regions. When a positive voltage is applied to the gate, current can flow through the transistor, thus turning it on. When the voltage drops to zero, the current is cut off and the transistor is effectively turned off.
The advantage of using the CSD16321Q5 MOSFET is that it has very low gate current, which means it consumes very little power when it is in the off state. This makes it ideal for applications where power efficiency is important, such as in battery-powered devices. In addition, the CSD16321Q5 has a low on-resistance, which minimizes power dissipation when the device is switched on.
The CSD16321Q5 is designed for specific applications, such as power supply and communications equipment. It can also be used in automotive, robotics, and other applications where a low-power, reliable, and efficient transistor is needed. Additionally, the CSD16321Q5 MOSFET is suitable for both digital and analog circuits, making it an ideal choice for a wide range of applications.
Aside from the features discussed above, the CSD16321Q5 also offers long-term reliability and durability. Its low voltage rating prevents damage from transient voltage spikes, while its high-current ratings give it the ability to handle a variety of switching applications. Additionally, the transistor has a fast switching speed of up to 1ms, which is ideal for a variety of control applications.
In summary, the CSD16321Q5 is a versatile N-channel MOSFET that is designed for specific application fields. It has a low gate current and a low on-resistance, which make it highly power-efficient. Additionally, it is rated at 650 volts and 5.3 amps, offering excellent power capabilities. Finally, the CSD16321Q5 MOSFET is highly reliable and has a fast switching speed, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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