CSD16321Q5C Discrete Semiconductor Products

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The CSD16321Q5C is a low-voltage, N-Channel MOSFET that is designed for various applications in which intermediate power levels can be handled with minimal power dissipation. This makes CSD16321Q5C ideal for operations where large amounts of energy must be held for long amounts of time, such as energy storage capacitors, battery charging circuitry, and feed-forward systems. It also finds applications in various switching-mode power supplies and audio amplifiers.

The basic operating principle of a MOSFET is based on field-effect control. The transistor is composed of three main terminals, the drain, gate, and source. A voltage applied to the gate terminal creates an electrostatic field that builds a potential barrier between the drain and source terminals. This potential barriar modulates charge carriers between the source and drain, thereby controlling the amount of electrical current that flows through the channel. The transistor may be operated in either a cut-off or a saturation region, which is also known as an enhancement or depletion mode, respectively.

In the case of the CSD16321Q5C, the drain-to-source voltage range is from 1.0 V to 5.5 V. The gate-to-source voltage range is from -2 V to 10 V. The maximum drain current is 15.4 A, and the maximum power dissipation is 159 W. Finally, the operating temperature is from -55 °C to 150 °C.

The availability of such features makes the CSD16321Q5C well suited for applications in which small amounts of power are needed, such as small signal switching, signal conditioning, and RF/microwave amplifiers. It is also suitable for gate-driving circuits, high-frequency amplifiers, and high-temperature environments.

The CSD16321Q5C is a useful component for many applications due to its low gate threshold voltage (1.0 V to 5.5 V) and low gate capacitance (25 pF typical). Its small size also makes it suitable for use in small spaces, such as hand-held devices. Furthermore, its wide operating temperature range makes it ideal for high-temperature applications.

The combination of its small size and wide operating temperature range make the CSD16321Q5C an ideal choice for a wide range of applications. Its low gate-source threshold voltage, low gate-capacitance, and low power dissipation make it the perfect choice for high-speed switching, signal conditioning, and RF/microwave amplifiers. It is also suitable for gate-driving circuits and high-frequency amplifiers.

In conclusion, the CSD16321Q5C is a versatile device that is suitable for many applications, from small signal switching to high frequency amplifiers. Its small size and wide operating temperature range make it ideal for the modern designer. Its low gate-source threshold voltage, low gate-capacitance, and low power dissipation make it a great choice for those applications where small amounts of power are required.

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