CSD16327Q3

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Introduction

The CSD16327Q3 is a N-channel Enhancement Mode (normally-off) low side SmartFET™ that is part of the SmartFET family of N-channel SONOS-based devices released by Texas Instruments. It has a wide range of applications in power management and control for automotive, industrial, computing and consumer electronics equipment. This paper will discuss the application field and working principle of CSD16327Q3.

Application Field

The CSD16327Q3 is a 532 V power MOSFET with a total gate charge of 1 mA. This device provides an economical yet reliable way to control high-current loads, and is designed to offer various features and integrated functions that reduce the time and cost burden of design. The CSD16327Q3 is a low-side MOSFET with a low on-resistance combined with a high load capacity and lockout capability. The device is specifically designed for automotive engine control applications and high power switching applications in industrial, computing, and consumer electronics equipment.

The device is suited for switching and controlling loads that require a relatively low on-state resistance and a low drive condition. It can be used in a variety of applications, including switching and controlling high-current loads such as AC power supplies, cooling fan controls, engine control, lighting and lighting control, and solenoids. It can also be used in applications where fast switching speed and excellent power control is required.

The device is also well-suited for automotive applications where it can be used for power management and system control. Injector control, spark plug control, and boost control are just some of the automotive functions that can be implemented using the CSD16327Q3.

Working Principle

The CSD16327Q3 is an enhancement-mode power MOSFET device. It uses a SONOS-based, N-channel MOSFET structure, which ensures low on-state resistance and excellent noise immunity. The device is also designed to withstand harsh automotive operating conditions, with a junction temperature protection range (Tj) of -40℃ to 150℃, and an operating temperature range (Tc) from -55℃ to 175℃.

The CSD16327Q3 is typically operated with a low gate drive voltage, typically 10 V or less. This allows the device to switch on with a low drive current requirement, thus reducing power consumption. When the device is switched on, a relatively low on-state resistance and high current capability is achieved. The device also has a fast switching speed, allowing it to switch on and off quickly, thus providing excellent control of the load.

The device is also designed with a lockout feature, which prevents the device from being turned on without a drop in voltage across the device. This is useful in some applications, such as AC power supplies, where the device needs to be switched off to prevent any undesired power flow. The lockout feature is also useful in applications where an external gate driver is needed to turn the device on and off.

In conclusion, the CSD16327Q3 is a highly reliable, high current power MOSFET which provides excellent power control. It is well suited for automotive engine control applications and high power switching applications in industrial, computing, and consumer electronics equipment. It is capable of withstanding harsh automotive operating conditions, and provides low on-state resistance and fast switching speed.

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