Allicdata Part #: | CSD16401Q5T-ND |
Manufacturer Part#: |
CSD16401Q5T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 100A 8VSON |
More Detail: | N-Channel 25V 100A (Ta) 3.1W (Ta) Surface Mount 8-... |
DataSheet: | CSD16401Q5T Datasheet/PDF |
Quantity: | 260 |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 12.5V |
Vgs (Max): | +16V, -12V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16401Q5T is a high performance N-channel MOSFET in a small and tightly packed form factor. It is a particularly USB-specific device that is capable of conducting high currents at low voltage. This makes the CSD16401Q5T an ideal choice in applications such as USB power supplies and on-board power management.
The device boasts a host of features that make it very attractive in applications needing efficient energy management and a high-performance power switch. The advanced process design and thermal optimization of the CSD16401Q5T allow for low RDS(on)s and high switching speeds. This results in enhanced performance, lower power consumption, and increased efficiency in the target application.
The CSD16401Q5T is an N-channel MOSFET that operates on the principle of a gate, or field effect-based, switch. MOSFETs are particularly useful in applications requiring high speed and efficiency as well as significant current handling. Since the conductivity of the device depends on the potential difference between the gate and the source, the device can be controlled through voltage applications.
The CSD16401Q5T features a low body diode forward voltage and design optimized for low input capacitance. The device is capable of operation at up to 55V and can be used in applications requiring forward current control and bi-directional current switching. The device is also suitable for a variety of output stages and clamps thanks to its excellent linearity and high output power.
The CSD16401Q5T is an ideal choice for a wide range of applications, most notably the USB power supply market. It is also a great choice for high-density, low-power regulators, high-side switches and reverse protection circuits. As it is a single-channel MOSFET, the CSD16401Q5T can be used in a variety of arrangements depending on the target application. This makes it a valuable and versatile choice for a wide range of industries.
The CSD16401Q5T is a highly advanced power switch featuring excellent efficiency and low RDS(on)s. This makes it ideal for applications requiring low-voltage, high-current performance. Its single-channel structure can be used in a variety of circuits and applications, making it a highly versatile solution for power switching applications. The device’s advanced design and optimization make it perfect for efficient energy management and high performance power switch applications.
The specific data is subject to PDF, and the above content is for reference
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