CSD17303Q5

Vgs(th) (Max) @ Id:	1.6V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSON-CLIP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3420pF @ 15V
Vgs (Max):	+10V, -8V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 25A, 8V
Drive Voltage (Max Rds On, Min Rds On):	3V, 8V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD17303Q5 Application Field and Working PrincipleThe CSD17303Q5 is an N-Channel Field Effect Transistor (FET) manufactured by Texas Instruments. It is a depletion-mode device, meaning that it has an off-state resistance (RDS) near zero when the gate voltage is at 0 V. It is designed for switching applications, such as for audio amplifiers, and has a drain-source breakdown voltage (BVD) of 4.3 V. The CSD17303Q5 is also known for its high current capability and low on-resistance (RDS) which makes it an ideal choice for a wide range of industrial, consumer, and communication applications.The CSD17303Q5 is composed of four pins, labeled Gate, Source, Drain, and Body. The Gate and Source pins form the junction between the N-channel FET, while the Drain and Gate form the P-channel. The Body pin acts as an electrical center, providing a neutral conductive path between the Gate and Drain.The transistor works by using an electric field to attract electrons, which are then pulled away from the Gate and towards the Drain. This creates a low-resistance channel between the two points, allowing current to flow. In order to keep the channel open, a small voltage must be applied to the Gate pin, allowing the field to remain strong and the current to flow. When the Gate voltage is raised, the field weakens and the channel closes, blocking current flow. The CSD17303Q5 has an extremely low input capacitance, which allows it to operate quickly and accurately. Additionally, it has a low gate charge, which further helps to minimize switching losses. This makes it ideal for fast switching time applications, such as for high-speed processing.The CSD17303Q5 also has an excellent linear region, meaning that it is highly suitable for analog applications, such as for audio amplifiers or analog-to-digital converters. The low thermal resistance of the device also allows it to run at higher temperatures without degrading its performance.The operating conditions of the CSD17303Q5 are: a drain-source breakdown voltage (BVD) of 4.3 V, an off-state drain current (ID) of -175 mA, an on-state resistance (RDS) of 0.25 ohms, and a gate-source voltage (Vgs) range of -2V to 10V. The maximum power dissipation is 35 mW and the maximum drain current is 100 mA.Overall, the CSD17303Q5 is an excellent choice for applications where high current, high speed, and low on-resistance are required. It is used in a variety of applications, including audio amplifiers, high-frequency switching, and power-supply regulation. Its low input capacitance allows it to switch quickly and accurately, while its low thermal resistance makes it suitable for use in high-temperature environments. Additionally, the device has excellent linearity, making it suitable for analog applications.

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