Allicdata Part #: | 296-25855-2-ND |
Manufacturer Part#: |
CSD17305Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8SON |
More Detail: | N-Channel 30V 29A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
DataSheet: | CSD17305Q5A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 15V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD17305Q5A transistor is a type of power field effect transistor (FET) designed for various power management applications. It has been specifically designed to operate in a wide range of conditions including high temperatures, high input voltages, and high output currents. The CSD17305Q5A transistor is ideal for use in applications that require reliable and efficient power management, such as voltage and current regulation in industrial and automotive applications.
The CSD17305Q5A is a single power FET that belongs to the COS (control oscillatory steady state) family. This type of transistor operates using a bi-directional current flow, with a gate and drain that acts as the control components of the device. This transistor is composed of a silicon semiconductor material and features an n-channel construction. The n-channel construction makes the CSD17305Q5A transistor suitable for various applications, such as switched-mode power supplies, power converters, power systems, and power ICs.
The CSD17305Q5A transistor uses a silicon substrate with a metal oxide semiconductor (MOS) gate structure. This gate structure allows for a high degree of control over currents and voltages, as well as temperature-dependent properties. As such, the CSD17305Q5A is an ideal choice for voltage and current regulation in industrial, automotive, and even telecom applications.
In order to control the CSD17305Q5A transistor, gate drive circuits are used to apply a gate voltage to the gate. When the gate voltage is applied, a current is induced in the drain and source that generates a voltage across the drain and source terminals. This voltage, referred to as the gate-source voltage, is proportional to the gate voltage, and determines the current flow in the device. This current flow is then regulated by changing the gate-source voltage.
The CSD17305Q5A transistor is one of the most reliable and efficient power management devices available, making it a preferred choice for various power applications. The device is available in a number of packages, which makes it suitable for a wide range of applications, providing engineers with a greater degree of flexibility when designing their power systems. In addition, the device is also highly tolerant of temperature, making it a great choice for high temperature applications.
The CSD17305Q5A transistor is well-suited for applications that require efficient, reliable, and temperature-tolerant power management. This type of device is ideal for use in industrial and automotive applications, as well as telecom applications. The device\'s n-channel construction ensures superior characteristics and performance, as well as a high degree of control over current and voltage, making it an ideal choice for voltage and current regulation.
The specific data is subject to PDF, and the above content is for reference
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