CSD17318Q2T

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CSD17318Q2T is an N-Channel MOSFET designed to provide high-efficiency power switching in a wide range of applications. It is constructed from a vertical dual N-channel MOSFET cell, offering the flexibility of two independent on / off switches for applications with limited board space. The device is characterized for low gate charge, low threshold voltage, high drain-source breakdown voltage, and excellent RDS(on) for both channels.

Application Field

The CSD17318Q2T is ideal for use in a wide range of electronic equipment and power management circuits, including low-voltage DC-DC converters, switch-mode power supplies, IGBTs, power modules, high-current switching, and PFC-controlled loads. The dual N-channel MOSFETs eliminates the need for two separate devices, reducing board space and power loss due to switching. Additionally, the low gate charge and low threshold voltage allows the device to operate at lower voltage and higher speed.

Working Principle

The CSD17318Q2T is a vertical dual N-channel MOSFET, with each channel formed from two identical parallel N-channel vertical MOSFETs. The channels are connected in series, with each channel used to control the current flow in either direction. The two channels are independently operated via two gates, allowing both channels to be turned on or off independently. The drain-source breakdown voltage of the device is typically Vgs-2V. The on-resistance of each FET is typically RDs(on). Additionally, the low gate charge and low threshold voltage of the device enable fast switching times and low power dissipation.

The operation of the CSD17318Q2T is based on the principle of the MOSFET, in which a voltage applied to the gate of a transistor turns it on and off. When the gate is high (accordance with the drain-source Voltage) electrons will be attracted to the gate and this will turn on the device. When the gate voltage is low, the electrons will not be attracted to the gate, thereby turning off the device. The device operates at frequencies from dc up to 3GHz and can handle currents up to 32A. The device is extremely reliable and is typically used for power management due to its superior performance.

In conclusion, the CSD17318 Q2T is an advanced N-Channel MOSFET designed specifically for high-efficiency power switching applications. Its low gate charge, low threshold voltage, and high drain-source breakdown voltage make it ideal for applications such as low-voltage DC-DC converters, switch-mode power supplies, IGBTs, power modules, and high-current switching. The device operates at frequencies up to 3GHz and can handle current up to 32A. The device is highly reliable and is typically used for power management due to its superior performance.

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