CSD17382F4 Allicdata Electronics
Allicdata Part #:

296-49600-2-ND

Manufacturer Part#:

CSD17382F4

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 2.3A LGA
More Detail: N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD17382F4 datasheetCSD17382F4 Datasheet/PDF
Quantity: 6000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 6000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V
Vgs (Max): 10V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 64 mOhm @ 500mA, 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD17382F4 is a power MOSFET developed by Motorola, which is a member of the FET, MOSFET and single transistors family. It is a power MOSFET that enables high power efficiency for applications in the industrial and automotive industries.

The main component of the CSD17382F4 is the n-channel power MOSFET (PMOSFET). It has an integral drain-source voltage rating of 22V and can be operated from a supply voltage range of 5V to 22V. It is also capable of carrying a drain current of 17A and has a maximum allowable power dissipation of 45W. The total gate capacitance of the CSD17382F4 is 2.8nF, making it suitable for high speed switching applications.

The CSD17382F4 is designed for both buck and boost regulated power applications which require the source voltage to exceed the drain voltage. For these applications, the device is capable of withstanding reverse voltages up to 15V. It also incorporates a number of features that help to minimize cross-conduction during switching operations and consequently, improve current efficiency and device reliability.

In addition, the CSD17382F4 MOSFET provides protection from short-circuit conditions and over-temperature conditions for applications that require tight circuit control and protection. Its operational temperature range is from -55°C to +175°C, thereby ensuring reliable operation in extreme temperature environments.

The working principle of the CSD17382F4 is based on the principle of electrical charge transfer. The device incorporates a vertical power n-channel insulated gate field effect transistor (IGFET) which utilizes the flow of electrical charge through its source and drain regions. When a gate voltage is applied to the gate region, an electric field is created that induces a drain current. As the drain current increases, a voltage drop is created across the device and the load current is lowered. The MOSFET is turned off when the voltage drop across the device is equal to or greater than the gate voltage.

The device is used in many different areas such as motor control, power supplies, lighting, home appliances and automotive electronics. It can be used in power circuits to control power modules, H-bridge converters and DC-to-DC converters. It can also be used in motor driver systems for industrial and automotive applications.

The CSD17382F4 is also suitable for use in a number of other applications, including frequency converters and switch mode power supplies. Additionally, it can be used in hot plugging applications and in remote switching systems.

Overall, the CSD17382F4 is an excellent device for applications needing a high power efficiency, low on-resistance, excellent temperature range and thermal runaway protection. It offers a high breakdown voltage and low gate capacitance making it well-suited for high frequency switching operations. It is also capable of providing protection from short-circuit and over-temperature conditions, thereby making it suitable for many industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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