CSD17382F4T Allicdata Electronics
Allicdata Part #:

296-44148-2-ND

Manufacturer Part#:

CSD17382F4T

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 2.3A PICOSTAR
More Detail: N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD17382F4T datasheetCSD17382F4T Datasheet/PDF
Quantity: 8250
1 +: $ 0.15000
10 +: $ 0.14550
100 +: $ 0.14250
1000 +: $ 0.13950
10000 +: $ 0.13500
Stock 8250Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V
Vgs (Max): 10V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 64 mOhm @ 500mA, 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD17382F4T is a type of MOSFET that is available for use in electronics applications, specifically as a single-mode field effect transistor. This type of transistor is used in many applications due to its cost-effectiveness, low power consumption and efficiency.

The CSD17382F4T is a n-channel enhancement mode field-effect transistor (MOSFET) that is housed in a SuperSOT-6 package. It works in the same fashion as an analog switch, allowing for the switching of large current and voltage signals by changing the gate voltage. The body of the transistor consists of two main components; the main gate, which is the control element, and the diffusion region, which is made up of a thin layer of oxidation that encloses the semiconductor material. When a voltage is applied to the gate, it attracts electrical charges, forming an electric field that in turn affects the behavior of the diffusion region region and thereby the conductivity of the channel.

The CSD17382F4T has a high drain current of 570mA and a drain source voltage of 30V. It also has a low on-state resistance when in its ‘on’ state, allowing for a large amount of current to pass through the transistor. It also has a breakdown voltage of 30V, which is the maximum power it can handle before it begins to break down and become unresponsive. Furthermore, its gate threshold voltage is -2V. This is the voltage required for the transistor to be switched from its ‘off’ to its ‘on’ state, which is important for applications such as controlling the speed and power of a motor, for example.

The CSD17382F4T is often used in radio frequency (RF) amplifiers, power supplies, and other applications that require accurate switching from low to high voltage levels. It is also suitable for use in some car and motor drive systems, motor control and energy management. Furthermore, it can be used in low power audio amplifiers, switches, and signal diversity applications, as well as general purpose power and logic circuits.

The CSD17382F4T MOSFET also works well in applications which require low gate power and switching with minimal transition time. It can be used in stability and temperature compensation circuits in voltage regulation and temperature sensing systems, as well as isolation amplifiers. Additionally, this type of transistor works well in applications in which high precision and high speed data transmission and reception is required.

With its high drain current and low on-state resistance, CSD17382F4T is a fantastic choice for many applications and makes a great addition to any design. Its low price also makes it a great choice for those who are on a budget. The high level of accuracy and performance it provides, reliably and consistently, makes it an invaluable tool for power management, sensor and audio amplification, and signal swicthing.

The specific data is subject to PDF, and the above content is for reference

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