CSD17506Q5A Discrete Semiconductor Products |
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Allicdata Part #: | 296-28408-2-ND |
Manufacturer Part#: |
CSD17506Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 100A 8SON |
More Detail: | N-Channel 30V 100A (Tc) 3.2W (Ta) Surface Mount 8-... |
DataSheet: | CSD17506Q5A Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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CSD17506Q5A is a type of single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can be applied in many different industries. The device is produced by ON Semiconductor, one of the most reliable semiconductor vendors. It is designed to provide increased power efficiency and reliability. Its built-in features and die construction enable it to handle high power applications with low output resistance.
The CSD17506Q5A consists of an N-type silicon substrate with a gate electrode on the top surface and a drain and source electrode on the bottom surface. The top gate electrode is insulated from the bottom layers and the source and drain layers by an insulating layer of gate dielectric. A thin layer of insulation between the gate and source helps to reduce the effects of gate current leakage. The device also includes an additional sense gate and sense drain to provide additional current sensing capabilities.
The specific application field and working principle of the CSD17506Q5A can be broken down into two primary uses. First, this device can be used as an amplifier or driver component in order to precisely control the output power sent to other devices. When the gate voltage is at the highest state, it drives the drain voltage to its maximum level. Conversely, when the gate voltage is at the lowest state, it reduces the drain voltage to its minimum level. This allows for fine, precise outputting capability.
The second main application of the CSD17506Q5A is for switching applications. This MOSFET can be used as a switch to turn on and off power to loads or other devices. When the gate voltage is at the highest state, the switch is turned on, allowing power to be sent to the desired device. When the gate voltage is at the lowest state, the switch is turned off, stopping the supply of power. By using this device as a switch, it can be utilized to control the power of a system without expending much energy.
Overall, the CSD17506Q5A can be used in a variety of applications requiring precision output control and switching applications. The technology and die construction utilized by the device make it a reliable and efficient component for operations. Its own design also allows it to be operated with low gate current leakage, thereby significantly reducing energy consumption. With its reliability and power efficiency, the CSD17506Q5A is an ideal MOSFET option for companies seeking a reliable and efficient semiconductor device.
The specific data is subject to PDF, and the above content is for reference
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