| Allicdata Part #: | 296-29020-2-ND |
| Manufacturer Part#: |
CSD17522Q5A |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 30V 87A 8SON |
| More Detail: | N-Channel 30V 87A (Tc) 3W (Ta) Surface Mount 8-VSO... |
| DataSheet: | CSD17522Q5A Datasheet/PDF |
| Quantity: | 2500 |
| 2500 +: | $ 0.36109 |
| 5000 +: | $ 0.34304 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSONP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 695pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 8.1 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The CSD17522Q5A is a semiconductor device manufactured by Texas Instruments and part of theIRFHA5300F HEXFET® power MOSFET family. The CSD17522Q5A is an Integrated Power Module (IPM) N-channel power MOSFET based on an advanced planar process. It is a low low-voltage MOSFET with an output voltage of 7.5 V and an on-state resistance of 10 mOhm.
MOSFETs have many advantages when compared to traditional bipolar transistors. This includes higher switching speed, lower on-resistance, and easier control of the output current. In addition, MOSFETs are better suited for applications such as switching power supplies, motor drives, and solid-state relays.
The CSD17522Q5A device is suitable for a wide range of applications, from power management in electric vehicles to grid-tied renewable energy systems and LED lighting. It is especially well suited for converters for 12/24/48V bus systems, power supplies with low output current such as auxiliary power supplies, and bus clamping used in automotive electronics.
In terms of its working principle, the CSD17522Q5A device works by using the MOSFET\'s gate-source voltage (VGS) to control the current flow through the drain (source to source) terminal. When the gate voltage is greater than the threshold voltage of the device, current can flow through the device. As the gate voltage is decreased, the drain-source current decreases.The CSD17522Q5A also has two other key features: body-diode protection and current sensing.
Body-diode protection is a feature which allows the MOSFET to act as a rectifier when an inductive load is connected to the MOSFET. It prevents voltage spikes or reverse current from inductive loads from passing through the MOSFET.The current sensing feature allows the MOSFET to monitor and deliver an accurate measure of the current being passed through the device by providing a sense voltage proportional to the drain-source current. This feature is helpful for controlling current in applications such as motor drive power supplies.
In conclusion, the CSD17522Q5A MOSFET is a versatile device that can be used in a wide range of applications, from automotive electronics to grid-tied renewable energy systems. It has the advantages of high switching speed, low on-resistance, and easy control of output current. It also features body-diode protection and current sensing, which allows it to accurately monitor and control current in applications such as motor drive power supplies.
The specific data is subject to PDF, and the above content is for reference
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CSD17522Q5A Datasheet/PDF