CSD17552Q5A

Vgs(th) (Max) @ Id:	1.9V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSONP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2050pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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CSD17552Q5A is one of the most advanced and powerful semiconductor devices used in modern electronics. It is a type of Field-Effect Transistor (FET) or Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). This device is known to excel in power management and heat management applications as well as high-frequency switching. It provides a combination of accuracy, low on-resistance, improved power loss, rugged construction, and low gate-charge. Its integrated structure helps reduce the number of components used in the circuit, resulting in more efficient power dissipation, improved circuit size, easier manufacturing and reduced cost.The CSD17552Q5A is a single FET and is part of the CSD17xxQ5A family of high-performance N-channel Enhancement Mode MOSFETs products. It is designed to deliver superior performance for high-current and high switching frequency applications. The device can be used in a wide range of applications, from low-voltage/high-current switch regulator, to high-side switching, to high-power motor drive applications.The CSD17552Q5A is an N-Channel Enhancement-Mode MOSFET that utilizes the latest advancements in V-MOSFET technology. It features 20V drain-to-source voltage (VDS), 16A continuous drain source current (ID) and 20.5m on-resistance (RDS _on). It also has a 24m/s maximum junction-to-case thermal resistance (R JC ) which is ideal for high-speed switching applications and transistors operating at a relatively high junction temperature. The on-resistance of the CSD17552Q5A is about half that of its predecessor, with an improved RDS _on at 20.5m .The device is ideal for power management applications, such as Automotive, Computing, Communications, and Industrial segments. Its benefits include improved system efficiency, as well as improved Power Efficiency and Usability. One of the distinctive features of CSD17552Q5A is its integrated gate-drive protection circuit, which prevents gate potentials from being too high, thereby minimizing the risk of breakdowns. Additionally, its built-in thermal protection circuit allows this device to have a safe maximum junction temperature (TJmax) of up to 175°C.To ensure maximum reliability and performance, the device uses high-reliability packaging technology, and has been fully 510k approval tested in accordance with international safety standards. The CSD17552Q5A has a high-frequency power train design which enables it to deliver superior performance for high-power and high-switching-frequency applications. Its operating frequency range is 5 kHz – 3 MHz, making it ideal for a broad range of applications. Typical applications which take advantage of this device include isolated DC-DC converters, synchronous buck converters, high-power motor drives, industrial high-power inverters, and high-power server applications.The CSD17552Q5A is built with a low-drain-source on-resistance and good body-diode performance, making it an ideal choice for power management applications requiring a high efficiency with low load synchronicity. Its high-current on-resistance specification makes it ideal for high-current applications. In addition, the device has low leakage current and low capacitance, which helps reduce overall power consumption. The CSD17552Q5A operates at a 3V – 25 V drain-source voltage (VDS) range, with typical on-resistance of 20.5m and typical gate-source voltage (VGS) range of 2.5V – 10V. It also has a low gate-charge of 2nC which allows for faster switching speed, improved efficiency and improved system performance. The device is capable of delivering up to 16A continuous drain source current (ID) and has a maximum junction-to-case thermal resistance (Rth JC) of 24m/s.The CSD17552Q5A is an ultra-high-performance device with a low-on-resistance capability, superior dynamic characteristics, improved power loss, and wide operating temperature range that make it an ideal choice for high-current and high-switching-frequency applications. Its combination of accuracy, low on-resistance and rugged construction makes it a great option for power management applications and high-power motor drive applications.

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