CSD17555Q5A

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The CSD17555Q5A is a 60V N-Channel PowerTrench MOSFET which provides superior performance in a wide variety of applications. It is designed with an internal gate-on DMOS source connected form and silicon gate source trench, allowing for enhanced efficiency in designs as compared to other types of MOSFETs. The CSD17555Q5A is ideal for use in power management applications such as DC-DC converters, synchronous rectifiers, and linear regulators.

The CSD17555Q5A utilizes an advanced gate-on DMOS source provided with a drain-source rating up to 60V and a maximum current of 27.5A. The gate-on DMOS source, combined with a highly efficient silicon gate-source trench structure, provides exceptional performance and low R_DS(on). This allows for a coordinated synchronization of switching and reduces switching loss while providing an easier transition time.

The CSD17555Q5A has a wide range of operating temperatures, with a minimum operating temperature of -55°C and a maximum operating temperature of 150°C. It also features a low gate-drain leakage current and a common-mode range that extends beyond the source voltage. In addition, the CSD17555Q5A is packaged in a compact, low profile 5x6mm 24-pin QFN package for easy design integration.

The working principle of the CSD17555Q5A is based on the concept of a Field Effect Transistor. It is essentially an electronic device used to control current or voltage by using an electric field. A MOSFET is a specific type of FET that utilizes a gate voltage to control current flow. When the gate voltage is applied, it creates an electric field in the semiconductor material between the source and the drain. This electric field modifies the conductivity of the semiconductor material, allowing current to flow between the source and drain.

In the case of the CSD17555Q5A, the gate voltage is applied to the gate-on DMOS source, which creates an electric field between the source and the drain. This electric field modulates the conductivity of the semiconductor material, allowing current to flow between the source and the drain. The gate-on DMOS source is connected from the source to the gate and an additional gate-source trench structure allows for enhanced performance by providing a coordinated synchronization of switching and reducing switching loss, allowing for easier transition time.

The CSD17555Q5A is ideal for power management applications such as DC-DC converters, synchronous rectifiers and linear regulators. With its low R_DS(on), wide operating temperature range and low gate-drain leakage current, the CSD17555Q5A is an ideal choice for these types of applications. It’s also packaged in a small, low-profile 24-pin 5x6mm QFN package, which makes it an easy choice for design integration.

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