CSD17571Q2 Allicdata Electronics

CSD17571Q2 Discrete Semiconductor Products

Allicdata Part #:

296-37193-2-ND

Manufacturer Part#:

CSD17571Q2

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 22A 6SON
More Detail: N-Channel 30V 22A (Ta) 2.5W (Ta) Surface Mount 6-S...
DataSheet: CSD17571Q2 datasheetCSD17571Q2 Datasheet/PDF
Quantity: 9000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 9000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-SON (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 468pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD17571Q2 is a high-speed, high-performance Field-Effect Transistor (FET) that is suitable for a wide range of applications. It is usually used in high-frequency power switching, as well as in low-noise and high-efficiency amplifier circuits. It is a single-type FET and contains an integrated circuit, which comprises a drain, a source, and a gate terminal.

The FET works on a principle of controlling the electric current that passes through a channel between two terminals by using an external electric field. This field is created by the voltage applied to the gate terminal, which “opens” and “closes” the channel, thus allowing or restricting the flow of current. In general, the voltage applied to the gate exerts an influence on the conductivity of the channel.

The most common use of CSD17571Q2 FETs is in switching applications, where the transistor is used to switch on and off a circuit at high frequencies. It is important to note that the FET’s low capacitance, high-speed switching time, and low RDS(on) make it particularly suitable for high-frequency switching applications.

The CSD17571Q2 also has an extremely low noise figure, which makes it ideal for use in low-noise amplifier circuits. It provides high gain, superior signal-to-noise ratio, and low input bias current, enabling it to work effectively in a wide range of low-noise amplifier circuits.

In addition, the FET is also used in high-efficiency power amplifiers due to its high breakdown voltage, fast switching speed, constant gm linearity, and low acoustic noise. By using the FET in such circuits, engineers are able to achieve power output levels that are in excess of those achievable with other devices.

Hence, the CSD17571Q2 FET is suitable for a wide range of applications, including high-frequency power switching, low-noise and high-efficiency amplifier circuits, and high-efficiency power amplifiers. Its superior characteristics make it the preferred choice for these applications, as it can provide stable performance and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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