Allicdata Part #: | 296-39997-2-ND |
Manufacturer Part#: |
CSD17578Q3A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 35A 8VSON |
More Detail: | N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface... |
DataSheet: | CSD17578Q3A Datasheet/PDF |
Quantity: | 0 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1590pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 37W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (3x3.15) |
Package / Case: | 8-PowerVDFN |
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The CSD17578Q3A is a Field Effect Transistor (FET) designed to deliver high performance in a wide variety of applications. This high performance transistor is a part of the Q-line family of products designed and manufactured by Fairchild Semiconductor. This type of transistor is used for switching or amplifying electrical signals in a multitude of systems and applications. The CSD17578Q3A is a single N-Channel FET, meaning it has one gate and is operated with a positive voltage between its sources and drains.
The CSD17578Q3A has a host of features that make it a ideal for a wide range of applications. It has a high linear current carrying capacity of 2 amps and a on-state resistance of 80 milli-ohms, making it ideal for low power applications. It also has a breakdown voltage of 30V, enabling it to handle higher voltage loads. Furthermore, it also has a very low gate input capacitance of 1.1pF, making it a good choice for working with high frequency signals.
The working principle of the CSD17578Q3A is based on the mechanism of the field effect. The voltage applied to the gate of the FET generates an electric field around the channel. This electric field is capable of modulating the charge carriers in the channel by creating an insulating barrier on either side. As a result, this modulated charge element can be used to either switch or amplify the signals.
The CSD17578Q3A is widely used in applications where low power, high linear current carrying capacity, and high breakdown voltage are needed. It is highly suitable for power supply control and switching circuits. It can also be used for voltage regulators and for pulse, RF, and current ripple applications. The CSD17578Q3A is also used in analog and digital circuits, such as amplifiers, oscillators, multiplexers, video games, and audio equipment.
In summary, the CSD17578Q3A is a high performance, single N-Channel FET capable of delivering high linear current carrying capacity and breakdown voltage. Its working principle is based on field effect technology, which is used to modulate the charge carriers in the channel. The CSD17578Q3A is a versatile device that can be used in a variety of applications, such as power supply control, voltage regulation, pulse voltage, and current ripple applications.
The specific data is subject to PDF, and the above content is for reference
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