CSD18541F5T Allicdata Electronics
Allicdata Part #:

296-44470-2-ND

Manufacturer Part#:

CSD18541F5T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 60V 2.2A PICOSTAR
More Detail: N-Channel 60V 2.2A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD18541F5T datasheetCSD18541F5T Datasheet/PDF
Quantity: 3250
Stock 3250Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 777pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD18541F5T is a N-channel enhancement mode field effect transistor (FET). It is a single package device with a low resistance channel, allowing it to sustain high current levels, high switch speeds and superior power handling capabilities.

The CSD18541F5T is ideal for use in a variety of applications including motor control, power management, communications and consumer electronic applications. Due to its low RDS(on) and high power handling capability, it can be used to efficiently and effectively supply power in multi-phase DC-DC converter designs. The low resistance channel also provides low gate capacitance, making the CSD18541F5T the optimal choice in high frequency switching applications.

The CSD18541F5T uses an advanced field effect structure, known as Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to control the flow of current. Its structure consists of a P-type substrate and two N-type regions called the source and the drain, separated by a transistor channel. A voltage applied to the gate terminal causes a current in the channel. If a voltage is applied to the source and the gate, the current will flow from source to drain. This is known as an enhancement mode transistor and it has an on state resistance of typically 6.5mohms.

In the CSD18541F5T, the FET is combined with a Schottky diode. The Schottky diode is used in the off state to limit the rise in voltage when it is used for switching. This diode has a series impedance of only 3nohms, allowing for improved power efficiency. Additionally, the IC package containing the CSD18541F5T also contains a reverse blocking diode. This diode will block current flow from the drain to the source, allowing the transistor to be used in a bi-directional configuration.

The CSD18541F5T has a drain current rating of 55A, allowing it to be used in high current applications. It is also rated for a maximum junction temperature of 175C, making it suitable for use in harsh environments. Additionally, it is rated for a powerful breakdown voltage rating of 60V, allowing it to be used in a variety of voltage ranges.

The CSD18541F5T is an invaluable tool for managing power in industrial, automotive, and consumer electronic applications. Its low on-state resistance and high current capability make it well suited for applications in Class D audio, DC/DC converters, and brushless motor control. Its combination of schottky diode for fast switching and series impedance of 3nohms for improved power efficiency make it the optimal choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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