Allicdata Part #: | 296-42271-5-ND |
Manufacturer Part#: |
CSD18542KCS |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 60V 200A TO220-3 |
More Detail: | N-Channel 60V 200A (Ta) 200W (Tc) Through Hole TO-... |
DataSheet: | CSD18542KCS Datasheet/PDF |
Quantity: | 1365 |
1 +: | $ 1.41120 |
10 +: | $ 1.27386 |
100 +: | $ 1.02375 |
500 +: | $ 0.79623 |
1000 +: | $ 0.65973 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5070pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The CSD18542KCS, a RF MOSFET Power Amplifier by ON Semiconductor, is extensively used in end-user applications such as charging systems, industrial motor controllers, audio amplifiers and high-power transmitters and receivers. The CSD18542KCS combines the low gate charge and low RDSon characteristics of a MOSFET with the high-input impedance of a bipolar junction transistor (BJT) to provide high-power outputs with great efficiency while optimizing signal fidelity.
The CSD18542KCS is a MOSFET type transistor, which stands for metal-oxide-semiconductor field effect transistor. It is a type of field-effect transistor (FET) and is among the most efficient transistors available today. The CSD18542KCS has a low gate capacitance of 200-250 pF, and a maximum power rating of 50V at 0.8W. It also has a high frequency range, from DC to up to 20GHz, enabling it to be used in high-bandwidth applications.
The working principle of the CSD18542KCS is based on the fact that in a MOSFET structure, the potential of the gate electrode can control the current flowing through the device. The gate terminal of a MOSFET acts as a switch, controlling the amount of current allowed to flow through the device. When the potential at the gate is positive, the transistor is turned ‘on’ and allows current to flow. Conversely, when the potential of the gate is negative, the transistor is ‘off’ and no current flows.
Thanks to the high-input impedance of a MOSFET compared to a BJT, the CSD18542KCS requires very little energy to activate and reduce power losses due to the gate parasitic capacitance. In addition, the CSD18542KCS amplifier enables a wide range of output power levels due to its good linearity. This device also has a high level of immunity to temperature, making it well-suited for applications in extreme temperature environments.
The CSD18542KCS has many advantages over other transistors, such as BJTs and MOSFETs. In addition to its high efficiency and low power losses due to its gate parasitic capacitance, the CSD18542KCS also provides a wide frequency range. The device’s high-input impedance further reduces the power losses and improves the signal fidelity. Furthermore, its excellent temperature immunity and good linearity make it ideal for applications where the temperature can change quickly.
The CSD18542KCS is an excellent choice for end-user applications such as charging systems, motor controllers, audio amplifiers and high power transmitters and receivers. Its low gate charge, low RDSon, high-input impedance, wide frequency range, and good temperature performance make it an ideal power amplifier for these types of applications. Furthermore, the CSD18542KCS provides efficient output power levels with great signal fidelity and is an excellent addition to any power amplifier design.
The specific data is subject to PDF, and the above content is for reference
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