CSD18542KTT

Introduction

The CSD18542KTT is a discrete high-voltage N-channel enhancement mode MOSFET. The device features an optimized design to deliver superior performance in the application fields with current requirements beyond the scope of integrated circuits.

Application fields

The CSD18542KTT is designed for a broad range of applications, including high-power switching, voltage regulation, power delivery, and motor control.

• Power MOSFET switching. The CSD18542KTT is suitable for high frequency, low voltage switching applications such as DC-DC converters, inverters, AC power line control and motor control. The device can handle currents up to 200A and voltage up to 500V.
• Voltage Regulator. The CSD18542KTT is suitable for use in low-dropout and high-side voltage regulators due to its high current threshold and low RDS(on). The device can be used to regulate voltage from 1V to 50V and current up to 30A.
• Power Delivery. The CSD18542KTT can be used for power distribution applications due to its high voltage and current capability. The device can be used in AC- and DC- connected applications, including automotive and industrial applications.
• Motor Control. The CSD18542KTT is well suited for automotive, industrial and home-appliance motor control applications due to its high current capability and fast switching speed. The device can be used for switching currents up to 200A.

Working Principle

The CSD18542KTT is an insulated gate bipolar transistor (IGBT) that works using an process well known as the “floating gate electrode” process. This means that the gate is directly connected to the source connection, which allows for very efficient power switching. The device is also highly efficient due to its low gate charge, high current ratings and high voltage ratings.

The operating principle of the CSD18542KTT is based on the enhancement mode of MOSFETs. When there is no voltage applied to the device, the gate of the transistor is said to be “floating”, meaning that the gate is not connected to either the source or the drain. When a voltage is applied, the channel changes from a non-conducting to a conducting state, allowing current to flow between the source and the drain.

In addition to this, the CSD18542KTT utilizes an additional “body” terminal. This terminal allows for additional control over the device, such as enhanced current control and improved efficiency. It also allows for the device to be used in applications that require a floating power source.

Conclusion

The CSD18542KTT is an N-Channel Enhancement-mode MOSFET that can be used in a range of applications, including high-power switching, voltage regulation, power delivery, and motor control. The device is highly efficient due to its low gate charge and high current ratings, and is easy to use due to its simple operating principle.