Allicdata Part #: | 296-37287-5-ND |
Manufacturer Part#: |
CSD19505KCS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 80V 150A TO-220 |
More Detail: | N-Channel 80V 150A (Ta) 300W (Tc) Through Hole TO-... |
DataSheet: | CSD19505KCS Datasheet/PDF |
Quantity: | 1444 |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7820pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 100A, 6V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The CSD19505KCS is a single N-Channel MOSFET. It is a high voltage, fast switching MOSFET which makes it a suitable component for a variety of applications across many industries. It has a maximum Drain-Source voltage (VDS) rating of 500V with a maximum current handling capability up to 46A. This component is regulated by the United States Department of Energy (DOE) and is ideal for high efficiency applications.
Applications of the CSD19505KCS
The CSD19505KCS is designed for use as a power switch in a variety of applications. Due to its high voltage and current handling capabilities, it can be used as an ideal component in applications such as DC-DC converters, AC inverters, load switches, motor control, and motor-drives. It is also suitable for use in industrial and automotive applications, machine building applications, renewable energy systems, and more.
Working Principle of the CSD19505KCS
The CSD19505KCS is a type of MOSFET (Metal–Oxide–Semiconductor–Field–Effect–Transistor). MOSFETs are voltage-controlled transistors, meaning a small voltage applied to the Gate Terminal can control a larger voltage at the Drain Terminal. This makes them an ideal choice for applications in which a high voltage and current need to be controlled by applying a low voltage source. The CSD19505KCS works by having the small voltage applied to the Gate terminal to control the much larger voltage of up to 500V at the Drain terminal.
The CSD19505KCS has a threshold voltage of 10V. This means the voltage applied to the Gate must be at least 10V in order for the larger voltage to be allowed to flow through the MOSFET. The MOSFET then works by reducing the high voltage across the load with the drain voltage set to the voltage applied to the gate, effectively allowing an efficient regulation of the high current flow.
Benefits of the CSD19505KCS
The CSD19505KCS is an ideal choice for a variety of uses due to its high voltage and current ratings, its fast switching capabilities, and its high efficiency. It is especially useful in applications where high power needs to be regulated and controlled efficiently. The CSD19505KCS is also highly reliable, making it a safe choice for applications which require a great amount of dependability.
The CSD19505KCS also offers a low internal resistance, which significantly reduces switching times and helps maintain smooth flow control. It also offers an integrated thermal protection diode, which helps protect against short circuits. In addition, the CSD19505KCS offers a rugged construction which can resist adverse environmental conditions, making it suitable for a wide range of operating temperatures.
Conclusion
The CSD19505KCS is an extremely versatile and efficient MOSFET which can handle high power applications with greater efficiency than other components. It is suitable for a wide range of applications across many industries, and its high voltage and current capabilities, along with its low internal resistance, make it an ideal choice for regulating and controlling high power applications with great accuracy and precision. Additionally, its rugged construction and integrated thermal protection diode helps to ensure that it remains reliable and dependable even in adverse environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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