CSD19532KTT

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The CSD19532KTT is a N-channel field effect transistor (FET) product with a low gate charge of 0.9nC and an on-resistance of 95mΩ at 4.5V. It is designed for use in a variety of applications such as portable power supplies and point-of-load (POL) converters. The CSD19532KTT is fabricated on a sub-micron process utilizing a proprietary wafer process technology.

A FET is a transistor that utilizes an electrical field to control current flow, as opposed to a conventional transistor which utilizes a voltage input (called a bi-polar transistor, or BJT). This use of electric field results in substantially reduced power consumption as compared to a BJT. FETs have also been referred to by a variety of similar terms including field effect transistors, insulated-gate transistors, and uni-polar transistors.

The construction of the CSD19532KTT is based on a single FET developed by a process technique known as Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This technology offers a number of distinct advantages over conventional FETs including low on-resistance, low gate charge and low capacitance. This results in higher current handling capabilities and excellent power efficiency.

The CSD19532KTT is a general-purpose device suitable for many power management and POL applications. Its low gate charge reduces the output voltage droop which occurs when the polarity of the input voltage and the output voltage become reversed. Its low output capacitance also helps reduce EMI and improve performance in audio amplifiers.

In addition to its power management capabilities, the CSD19532KTT can be used as a switching device in high speed logic circuits. Its fast switching speed and low on-resistance make it ideal for use as an input buffer in digital signal processing applications. Its excellent thermal characteristics allow for operation at high temperatures, making it suitable for use in temperaturecritical applications.

The CSD19532KTT utilizes source and drain terminals which are connected to each other in order to complete the current path. When the gate is biased with a voltage signal, the transistor will enter a conducting state and allow current to flow between the source and drain. The gate voltage also determines the amount of current that can flow through the device, allowing the user to adjust the current flow according to their needs.

In summary, the CSD19532KTT is a single FET device with a low gate charge, low on-resistance, and excellent thermal characteristics. It is designed for use in power management, POL, and switching applications, and can also be used as an input buffer in digital signal processing applications. The device has been designed to ensure high performance, reliability and long life operation

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