CSD19536KCS

Vgs(th) (Max) @ Id:	3.2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	12000pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	153nC @ 10V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	2.7 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	150A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CSD19536KCS Application Field and Working Principle

The CSD19536KCS is an advanced n-channel, self-protected PowerTrench® MOSFET from Siliconix.It has improved on-resistance with lower gate charge compared to competing power MOSFETs. It is primarily used in synchronous buck and boost applications in computing and consumer applications, as well as power supplies, industrial power control, and automotive applications.

General Description of the CSD19536KCS

The CSD19536KCS is a high dV/dt, 30 V B-FET power MOSFET in a PG-TO-220 package. It offers the following features and benefits:- Improved avalanche capability, with ultra-low on-resistance;- Low drain-to-source capacitance;- High maximum drain current at low gate drive;- Low total gate charge;- Temperature monitoring capability;- Negligible switching noise;- Enhanced latch-up immunity;- Positive Body Diode characteristics;- Process flexibility;- Excellent thermal spreading characteristics.

Working Principles

The working principle of the CSD19536KCS is based on the physical structure of a MOSFET. It is a three-terminal, vertical, symmetrical structure with its source, drain, and gate electrodes. The CSD19536KCS’s source and drain electrodes are the conducting channels of the device and the gate terminal is used to control the channel.The working of CSD19536KCS is based on the field effect principles. The gate electrode modulates the vertical electric field between the source and the drain terminals. When the gate voltage is applied, an electric field is created which changes the nature of the junction. This will determine the current flow through the device.For positive gate voltage, the junction is brought towards forward bias and thus increases the current flow through the device. This increases the overall drain current by decreasing the device’s on-resistance. When the gate voltage is reversed, the junction gets into a reverse-biased state, thus blocking the current flow.The CSD19536KCS also has a built-in temperature sensing feature. This feature helps to protect the device from high temperature conditions and hence increases its efficiency and reliability. The temperature sensing feature helps the device to maintain a constant drain current when the temperature rises above a certain point.

Applications of CSD19536KCS

The CSD19536KCS has a wide range of applications, including high-efficiency power systems, in computing, consumer and automotive applications. It is mainly used in power supplies, industrial power controls, synchronous buck/boost converters, and other rugged power control applications.One of the major applications of the CSD19536KCS is in synchronous buck regulator systems. These are essential components of high-efficiency, high-current, and high-power applications in portable, computing and mobile applications. This device’s superior on-resistance helps to reduce the input voltage ripple and maintain a high power efficiency in the system. The CSD19536KCS is also used in many applications where high dV/dt is important, such as automotive systems. Due to the device’s low gate charge and low drain-drain capacitance, it is ideal for applications where dV/dt performance is a primary concern. Additionally, it is also used in current-fed push−pull converters for industrial power control applications. This enables high power drive and switching capability in demanding industrial applications. The CSD19536KCS is an extremely versatile device and is a great choice for power converters, power control and motor drive applications. Its advanced features such as temperature monitoring and enhanced latch-up immunity make it an ideal device for many power management needs.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description