DMN2008LFU-7 Allicdata Electronics

DMN2008LFU-7 Discrete Semiconductor Products

Allicdata Part #:

DMN2008LFU-7DITR-ND

Manufacturer Part#:

DMN2008LFU-7

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CHA 20V 14.5A DFN2030
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 14.5A 1W Surfa...
DataSheet: DMN2008LFU-7 datasheetDMN2008LFU-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.14400
10 +: $ 0.13968
100 +: $ 0.13680
1000 +: $ 0.13392
10000 +: $ 0.12960
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMN2008LFU-7 is a multichannel MOSFET array designed for use in communications, consumer electronics, automotive, and industrial applications. This MOSFET array is ideal for applications that require a high-speed switching element and low on-resistance.

A MOSFET array is composed of a group of metal-oxide-semiconductor field-effect transistors (MOSFETs). Each MOSFET in the DMN2008LFU-7 has its own source, gate, and drain, which can be individually controlled to perform different tasks. This device is especially useful when used with high-frequency signals.

The DMN2008LFU-7 is constructed using the latest fabrication technology, which ensures low on-resistance and improved switching performance. It features an integrated reverse-blocking diode and a thermal shutdown circuit. This device can be easily integrated into circuits, as it is available in a surface mount package.

The DMN2008LFU-7 offers a wide range of operating voltages and can be used for a variety of applications. It is suitable for use in automotive electronics and consumer electronics, including motor control, high-side switching applications, and high-end audio amplifiers.

This device also provides excellent noise immunity and thermal resistance. It can withstand temperatures up to 85 °C and offers a wide operational frequency range. The DMN2008LFU-7 has a low ON-resistance of 8 W typ and a maximum gate-source voltage of 20 V.

The DMN2008LFU-7 is also an effective choice for low-side switching applications like load switches, as it has a low ON-resistance and an integrated reverse-blocking diode. This device is also suitable for high-side switching applications, as it features a maximum gate-source voltage of 20 V and is able to drive high in-rush currents.

In addition, the DMN2008LFU-7 is highly reliable and efficient. It features a low leakage current and low gate-charge, which reduce overall operating costs and power consumption. This device is also RoHS compliant.

All in all, the DMN2008LFU-7 is a robust, high-performance MOSFET array designed for use in a variety of applications. Its integrated reverse-blocking diode, thermal shutdown circuit, and low on-resistance ensure that it is a reliable and efficient option for a variety of switching applications.

The specific data is subject to PDF, and the above content is for reference

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