DMN2008LFU-7 Discrete Semiconductor Products |
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| Allicdata Part #: | DMN2008LFU-7DITR-ND |
| Manufacturer Part#: |
DMN2008LFU-7 |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET 2N-CHA 20V 14.5A DFN2030 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 14.5A 1W Surfa... |
| DataSheet: | DMN2008LFU-7 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.14400 |
| 10 +: | $ 0.13968 |
| 100 +: | $ 0.13680 |
| 1000 +: | $ 0.13392 |
| 10000 +: | $ 0.12960 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 14.5A |
| Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 5.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs: | 42.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1418pF @ 10V |
| Power - Max: | 1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-UFDFN Exposed Pad |
| Supplier Device Package: | U-DFN2030-6 (Type B) |
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The DMN2008LFU-7 is a multichannel MOSFET array designed for use in communications, consumer electronics, automotive, and industrial applications. This MOSFET array is ideal for applications that require a high-speed switching element and low on-resistance.
A MOSFET array is composed of a group of metal-oxide-semiconductor field-effect transistors (MOSFETs). Each MOSFET in the DMN2008LFU-7 has its own source, gate, and drain, which can be individually controlled to perform different tasks. This device is especially useful when used with high-frequency signals.
The DMN2008LFU-7 is constructed using the latest fabrication technology, which ensures low on-resistance and improved switching performance. It features an integrated reverse-blocking diode and a thermal shutdown circuit. This device can be easily integrated into circuits, as it is available in a surface mount package.
The DMN2008LFU-7 offers a wide range of operating voltages and can be used for a variety of applications. It is suitable for use in automotive electronics and consumer electronics, including motor control, high-side switching applications, and high-end audio amplifiers.
This device also provides excellent noise immunity and thermal resistance. It can withstand temperatures up to 85 °C and offers a wide operational frequency range. The DMN2008LFU-7 has a low ON-resistance of 8 W typ and a maximum gate-source voltage of 20 V.
The DMN2008LFU-7 is also an effective choice for low-side switching applications like load switches, as it has a low ON-resistance and an integrated reverse-blocking diode. This device is also suitable for high-side switching applications, as it features a maximum gate-source voltage of 20 V and is able to drive high in-rush currents.
In addition, the DMN2008LFU-7 is highly reliable and efficient. It features a low leakage current and low gate-charge, which reduce overall operating costs and power consumption. This device is also RoHS compliant.
All in all, the DMN2008LFU-7 is a robust, high-performance MOSFET array designed for use in a variety of applications. Its integrated reverse-blocking diode, thermal shutdown circuit, and low on-resistance ensure that it is a reliable and efficient option for a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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DMN2008LFU-7 Datasheet/PDF