DMN2019UTS-13 Allicdata Electronics

DMN2019UTS-13 Discrete Semiconductor Products

Allicdata Part #:

DMN2019UTS-13DITR-ND

Manufacturer Part#:

DMN2019UTS-13

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 20V 5.4A TSSOP-8
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5...
DataSheet: DMN2019UTS-13 datasheetDMN2019UTS-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Base Part Number: DMN2019
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2019UTS-13 is a high performance, low voltage, smaller footprint, general purpose FET Array chip. It is widely used in power management designs, power delivery, and chip process simplification applications. This chip has been used in many different fields and offers good reliability, safety, and efficiency.

The DMN2019UTS-13 is an array of Field Effect Transistors (FET) connected in an array or grid pattern. This is a type of semiconductor device in which current flows through a channel of a material other than the main conductor. A FET is operated by applying a voltage to a region of the material in which current will travel.

The chip contains four FETs connected in an array for maximum performance. Each FET contains a Gate, Drain, and Source. The Gate and Source are connected to the main conductor and the Drain is connected to the channel of material.

The DMN2019UTS-13 operates with very low voltage and current levels. This makes it suitable for power management designs and portable applications. The chip also uses a smaller footprint and is capable of operating in higher frequencies than traditional FETs. This is necessary for higher frequency and/or higher power applications.

The DMN2019UTS-13 has a very good thermal design which is implemented by using an integral thermal diffusion sheet and thermally conductive adhesive pads. This design helps to maximize heat dissipation. The chip also has better reliability and less power leakage due to its advanced process technology.

The DMN2019UTS-13 can be used in a wide range of applications from power management designs to process simplification. This device can provide a cost effective and reliable solution for many applications that require higher performance and flexibility.

The DMN2019UTS-13 is a highly reliable and efficient chip which provides good performance in many applications. This device has an integrated thermal design and offers good power efficiency. It is an ideal solution for many applications requiring efficient and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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