| Allicdata Part #: | DMN26D0UFB4-7DITR-ND |
| Manufacturer Part#: |
DMN26D0UFB4-7 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 20V 230MA DFN |
| More Detail: | N-Channel 20V 230mA (Ta) 350mW (Ta) Surface Mount ... |
| DataSheet: |  DMN26D0UFB4-7 Datasheet/PDF |
| Quantity: | 201000 |
| 1 +: | $ 0.27000 |
| 10 +: | $ 0.25000 |
| 100 +: | $ 0.21000 |
| 1000 +: | $ 0.15000 |
| 10000 +: | $ 0.07000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Package / Case: | 3-XFDFN |
| Supplier Device Package: | X2-DFN1006-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 350mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 14.1pF @ 15V |
| Vgs (Max): | ±10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 100mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMN26D0UFB4-7 is a single transistor. It is designed to deliver high performance in a wide range of applications, from power amplification to signal switching. It is commonly used in automotive electronics, medium- and high-power audio systems, and similar applications. The DMN26D0UFB4-7 is a MOSFET transistor, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor combines the best of both bipolar and field effect transistor technology. It is typically used in more power-demand applications because of its ability to control high currents. The working principle behind the DMN26D0UFB4-7 is based on the gate-source voltage, or VGS. This is an electrical voltage applied between the gate and source terminals. It determines at what voltage the transistor is switched on and off. The operating voltage range of the DMN26D0UFB4-7 is -20V to 100V, and a drain current range of -60A to 25A. The DMN26D0UFB4-7 is ideal for applications that require high power switching and amplification. It can be used to control high power DC motors, AC mains relays, high current power amplifiers, or switching DC-DC converters. It can also be used in audio power amplifiers and similar applications where high current and/or high voltage switching is required. The DMN26D0UFB4-7 has several advantages over traditional bipolar transistors. It requires lower gate drive voltages and can be used with lower power supplies. This makes it more cost-effective and easier to use in applications with limited upstream power. The DMN26D0UFB4-7 also has a greater linearity and has better thermal resistance compared to other transistors.The DMN26D0UFB4-7 is a versatile single transistor which can be used in a wide range of applications. Its high current capabilities and gate-source voltage make it suitable for high power switching and amplification. Its low gate drive voltage requirements and better linearity compared to other transistors make it more cost-effective and easier to use in limited power supply applications. For these reasons, the DMN26D0UFB4-7 is a great choice for anyone looking for a reliable Single MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
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