DMN2058U-13

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The DMN2058U-13 is a N-Channel enhancement mode MOSFET with high performing characteristics and wide applications. It is typically used in power supplies, portable electronic devices, audio amplifiers and high density mounting circuits.

The DMN2058U-13 is designed with an integrated N-Channel MOSFET which has excellent electrical characteristics and performance features. The gate-source voltage of this device is rated at +20 V, with a gate-drain voltage of +40 V. The on-resistance (RDS on) is rated at 6.4 mΩ at a drain current of 20 A for an operating temperature of 25°C. Furthermore, the on-state resistance (RDS on) is measured at 0.5mΩ at a gate-source voltage (VGSS) of 10V. With a reverse transfer capacitance (Ciss) of 183pF and a gate-drain capacitance (Cgd) is rated at 12pF, the DMN2058U-13 is capable of providing excellent EMI behavior, improved turn-on and turn-off times.

The working principle of the DMN2058U-13 is based on the principle of field-effect control. When a voltage is applied to the gate, a conductive channel is created between the source and the drain electrode. This allows electric current to flow from the source to the drain, thereby controlling the voltage and current on the output. The amount of drain current is controlled by the gate voltage and is therefore referred to as the transconductance of the MOSFET. The amount of transconductance is measured in milli-Ohms per Volt (mΩ/V). The gate voltage can also be used to adjust the on-resistance (RDS on) and the capacitances Ciss and Cgd for improved dynamic performance.

The DMN2058U-13 has a wide range of applications, including power supplies, portable electronic devices, audio amplifiers and high density mounting circuits. It is also suitable for use in various electronic components, such as polarity guards, protection circuits, gate drivers, level shifters and energy harvesting circuits. The device is typically used in high-frequency switching applications, such as those found in automotive applications, computer power supplies and DC/DC converters.

The DMN2058U-13 is a N-Channel enhancement mode MOSFET which has excellent electrical characteristics and performance features. With its wide range of applications, it is ideal for use in various electronics components and high-frequency switching applications. The amount of drain current is controlled by the gate voltage, and the on-resistance (RDS on) and the capacitances Ciss and Cgd can be adjusted for improved dynamic performance.

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