DMN2028UFU-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Common Drain
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	7.5A
Rds On (Max) @ Id, Vgs:	20.2 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:	887pF @ 10V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UFDFN Exposed Pad
Supplier Device Package:	U-DFN2030-6 (Type B)

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Introduction

The DMN2028UFU-13 is a highly advanced field-effect transistor (FET) array. It is specifically designed for applications that require a high degree of ruggedness and reliability. This array is a top-of-the-line product and its use should be carefully considered. It is important that each user fully understands the applications and the working principles of the DMN2028UFU-13 array before attempting to use it.

Applications

The DMN2028UFU-13 FET array is widely used in an array of applications. Its high level of performance, reliability, and ruggedness makes it ideal for power switching, motor control, and other high-power applications. The DMN2028UFU-13’s wide range of voltage and current ratings also make it suitable for high-current and high-voltage switching applications.The DMN2028UFU-13 array is also commonly used in system power supplies, circuit protection, and other high voltage applications. Its advanced design also allows for improved protection against overvoltage and surge current events.

Working Principle

The DMN2028UFU-13FET array is based on a two-terminal metal oxide semiconductor (MOS) field-effect transistor (MOSFET) design. This means that it operates on the same principle as a traditional field-effect transistor, but with the addition of an insulated gate. This gate allows a voltage to be applied to the transistor’s source and drain electrodes, controlling the current flow between them.The DMN2028UFU-13 is an improvement on the traditional FET design, as it has been specifically designed for applications that require high levels of ruggedness and reliability. It has a low on-state gate voltage, a wide operating temperature range, and low thermal resistance. This makes it a reliable choice for use in high-power applications, as it can withstand extreme temperatures and protecting it from overvoltage and surge events.The DMN2028UFU-13 also incorporates a peak blocking voltage capability, which allows it to handle higher transient voltage peaks that would otherwise damage the device. This feature makes it an ideal choice for use in high voltage and current applications, such as solar panel array systems.

Conclusion

The DMN2028UFU-13 FET array is a highly advanced piece of technology. It is designed for applications that require a high degree of ruggedness and reliability, and its peak blocking voltage capability makes it ideal for high voltage and current applications. The DMN2028UFU-13 array is widely used in power switching, motor control, system power supplies, circuit protection, and other high voltage applications. Understanding the applications and working principles of the DMN2028UFU-13 array is important to ensure that it is used to its fullest potential.

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