| Allicdata Part #: | DMN2005K-7DITR-ND |
| Manufacturer Part#: |
DMN2005K-7 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 20V 300MA SOT23-3 |
| More Detail: | N-Channel 20V 300mA (Ta) 350mW (Ta) Surface Mount ... |
| DataSheet: | DMN2005K-7 Datasheet/PDF |
| Quantity: | 6000 |
| Rds On (Max) @ Id, Vgs: | 1.7 Ohm @ 200mA, 2.7V |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 350mW (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±10V |
| Vgs(th) (Max) @ Id: | 900mV @ 100µA |
| Series: | -- |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.7V |
| Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN2005K-7 is a single MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) with a wide range of applications. Its versatile design allows it to be used in a variety of applications such as motor control, power conditioning and switching. Typically, the DMN2005K-7 is packaged as a through-hole component and features very small body dimensions. This makes the DMN2005K-7 a great choice for high-density board designs with limited space. Its relatively low gate drive requirements also make it ideal for microcontroller and logic circuits.
The DMN2005K-7 is a depletion-mode MOSFET, which means that it is normally “ON” and will remain so until it is turned “OFF” by a gate voltage. This makes the DMN2005K-7 ideal for use as a switch in applications such as motor control, power conditioning and switching. Additionally, the DMN2005K-7 is able to handle a relatively large amount of power, making it suitable for medium- to high-power switching applications.
The DMN2005K-7 is built with a n-channel, enhancement-mode MOSFET with a capable gate-drain breakdown voltage (BVgd) of 60V and an RDS(ON) of 0.005 Ohms. The maximum drain current is 5A and the gate threshold voltage is -4.5V. The drain-source capacitance is low at 0.2pF, which further enhances its suitability for high-density board designs. This single MOSFET also features very low gate-body leakage current and a wide variety of packages to choose from.
The DMN2005K-7 is commonly used in motor control, power conditioning and switching applications. It is able to carry currents up to 5A and has a fast rise time and low gate charge. The low capacitance of the DMN2005K-7 also allows it to behave like a switch, allowing it to handle high-frequency switching needs. The device’s integrated protection features make it very suitable for industrial/automation control, renewable energy and automotive applications.
Due to its wide range of applications and relatively low cost, the DMN2005K-7 is a very popular field-effect transistor. Its small body size, low capacitance and high power rating make it ideal for high-density board designs and for use in any switching application. The DMN2005K-7 is easy to use and is highly reliable, making it an excellent choice for any project.
The specific data is subject to PDF, and the above content is for reference
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DMN2005K-7 Datasheet/PDF