DMN2005K-7 Allicdata Electronics
Allicdata Part #:

DMN2005K-7DITR-ND

Manufacturer Part#:

DMN2005K-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 300MA SOT23-3
More Detail: N-Channel 20V 300mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: DMN2005K-7 datasheetDMN2005K-7 Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 200mA, 2.7V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 900mV @ 100µA
Series: --
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2005K-7 is a single MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) with a wide range of applications. Its versatile design allows it to be used in a variety of applications such as motor control, power conditioning and switching. Typically, the DMN2005K-7 is packaged as a through-hole component and features very small body dimensions. This makes the DMN2005K-7 a great choice for high-density board designs with limited space. Its relatively low gate drive requirements also make it ideal for microcontroller and logic circuits.

The DMN2005K-7 is a depletion-mode MOSFET, which means that it is normally “ON” and will remain so until it is turned “OFF” by a gate voltage. This makes the DMN2005K-7 ideal for use as a switch in applications such as motor control, power conditioning and switching. Additionally, the DMN2005K-7 is able to handle a relatively large amount of power, making it suitable for medium- to high-power switching applications.

The DMN2005K-7 is built with a n-channel, enhancement-mode MOSFET with a capable gate-drain breakdown voltage (BVgd) of 60V and an RDS(ON) of 0.005 Ohms. The maximum drain current is 5A and the gate threshold voltage is -4.5V. The drain-source capacitance is low at 0.2pF, which further enhances its suitability for high-density board designs. This single MOSFET also features very low gate-body leakage current and a wide variety of packages to choose from.

The DMN2005K-7 is commonly used in motor control, power conditioning and switching applications. It is able to carry currents up to 5A and has a fast rise time and low gate charge. The low capacitance of the DMN2005K-7 also allows it to behave like a switch, allowing it to handle high-frequency switching needs. The device’s integrated protection features make it very suitable for industrial/automation control, renewable energy and automotive applications.

Due to its wide range of applications and relatively low cost, the DMN2005K-7 is a very popular field-effect transistor. Its small body size, low capacitance and high power rating make it ideal for high-density board designs and for use in any switching application. The DMN2005K-7 is easy to use and is highly reliable, making it an excellent choice for any project.

The specific data is subject to PDF, and the above content is for reference

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