Allicdata Part #: | DMN2056U-13-ND |
Manufacturer Part#: |
DMN2056U-13 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHANNEL 20V 4A SOT23-3 |
More Detail: | N-Channel 20V 4A (Ta) 940mW Surface Mount SOT-23-3 |
DataSheet: | DMN2056U-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05053 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 940mW |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 339pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN2056U-13 transistor is a high-performance lateral double diffused metal–oxide–semiconductor field-effect transistor (MOSFET). It forms part of the DMN2056U series of transistors, which offer maximum operating current of 8A and a single P-channel MOSFET with maximum drain-source voltage of -17V. The DMN2056U-13 is mainly used for switching applications in nominal voltage circuits of 0V to 400V and currents of up to 8A.
The device’s structure is composed of a N-type source region and a P-type drain region interconnected by a P-channel. It is further complemented by a gate oxide region and a metal gate contact, as well as several heavily doped regions. These regions are actuated by a VGS voltage to control the conductivity of the device. Depending on the applied voltage across the drain-source region, it changes from a fully open state (low-impedance) to a fully closed (high-impedance) state and generally acts as a switch.
The DMN2056U-13 is quite versatile in terms of application and its key features make it suitable for a range of applications. This includes medium-power switching circuits, power supplies and DC choppers, as well as pulse reservoirs and DC-DC converters.
For the DC chopper circuit, the DMN2056U-13 transistor’s features may be utilized to reduce the voltage or current by providing linear control over the switch. This is particularly useful in circuits operating with low-power and low-voltage supplies with limited signal sources. It also helps to reduce power consumption and improve system efficiency.
The transistor is also suitable for pulse reservoirs, where it is used to control high-energy pulses of varying lengths. Due to its insulated gate, the DMN2056U-13 transistor can be used for implementing complex pulse circuits, as opposed to static elements such as diodes and resistors.
The DMN2056U-13 transistor also performs well in applications such as DC-DC converters, where it can be used to develop a wide range of power supplies with low-current thresholds. This is further aided by the integrated gate oxide which improves output voltage regulation.
In summary, the DMN2056U-13 represents an effective solution for switching applications requiring high performance and wide operating temperature range. It facilitates smooth control over current flow and can be used in low voltage and current circuits to improve system efficiency.
The specific data is subject to PDF, and the above content is for reference
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