DMN2005UFG-7 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.05W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6495pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	164nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.6 mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	18.1A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to the DMN2005UFG-7

The DMN2005UFG-7 is a type of FET and MOSFET commonly used in single applications. It is a unique component that has a wide variety of applications due to its features and performance. This article will provide an overview of the DMN2005UFG-7, its application field and working principle.

Description of the DMN2005UFG-7

The DMN2005UFG-7 is a type of FET or Field Effect Transistor, that is used in single applications. It is a non-thru-hole device which is designed to be efficiently operated within a specific region and relies on an internal source gate structure. The compact structure and high ratings of the device enable it to achieve switching performance up to >6A and drain-source breakdown voltage of up to 150V.

Application Field of the DMN2005UFG-7

The DMN2005UFG-7 is primarily used in single, low-power applications such as logic level switching, DC motor control and peripheral interface device control. It is also well suited for power management in both commercial and industrial applications. Moreover, it can be used in applications such as mobile phone power management, LCD backlight control and power conversion.

Working Principle of the DMN2005UFG-7

The working principle of the DMN2005UFG-7 is based on the fact that the conductance of a FET is controlled by the gate voltage. By applying a certain gate voltage, the channel formed between the source and the drain will be opened or closed. This can be used to regulate the current flow through the device and therefore the power of the connected device.The DMN2005UFG-7 is designed to provide better control over current flow compared to traditional bipolar transistors. It features a molded gate structure, which eliminates high-frequency resonance under high voltage and current. This, in turn, helps increase reliability and boost operational performance of the device.

Conclusion

In conclusion, the DMN2005UFG-7 is an efficient single FET and MOSFET device which is suitable for low-power applications. Its unique properties allow it to be used in a wide variety of applications. Its conductance is controlled by the applied gate voltage and its molded gate structure eliminates high-frequency resonance. As such, the DMN2005UFG-7 is an ideal choice for those looking for a reliable and high performing single FET and MOSFET device.

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