DMN2011UFDE-13

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type E)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	610mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3372pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	84nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	11.7A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN2011UFDE-13 is a single-transistor field effect transistor used as an application component in semiconductor circuits. It is a key component used in semiconductor applications, such as signal amplification, signal switching, signal conditioning, and data conversion.The DMN2011UFDE-13 has a typical gate-source threshold voltage V (GS) of -4 V, which provides a wide range of dynamic operating ranges. This component also offers excellent resistance to electrostatic discharge (ESD).The DMN2011UFDE-13 is a n-channel, silicon-gate-passivated, avalanche-enhanced, field effect transistor manufactured with advanced semiconductor technology. It also has a positive voltage-controlled enhancement mode body diode (EBPD) integrated into the component, which makes it ideal for use in digital coupled-gate applications.The DMN2011UFDE-13 is a source-drain voltage-controlled component. In its simplest form, it consists of a single semiconductor body (the substrate) with a semiconductor material at one end that has been doped to form a source (typically N-type) and a semiconductor material at the other end that has been doped to form a drain (typically P-type). Between the two is a gate. This component is designed to be connected between the source and the drain in order to control the flow of electrical current between the two elements.The operation of the DMN2011UFDE-13 is based on the principle of voltage-controlled field effect. When a voltage is applied to the gate, it induces a field between the source and the drain that creates a channel in the semiconductor material there. The field created in the semiconductor allows or prevents the flow of electrical current between the source and the drain, depending on the relative magnitudes of the source and the drain voltages.There are several key characteristics that differentiate the DMN2011UFDE-13 from other Field Effect Transistors (FETs). These include its high breakdown voltage, low leakage current and low input capacitance. The DMN2011UFDE-13 also has very good ESD protection, which makes it suitable for use in high-performance applications.The DMN2011UFDE-13 is commonly used in circuits that require high-gain amplification, high-speed switching and signal conditioning. It is also used in telecommunication and industrial automation equipment, as well as in automotive and consumer electronics applications.In conclusion, the DMN2011UFDE-13 is a single-transistor field effect transistor used as an application component in semiconductor circuits. It is a key component used in semiconductor applications, such as signal amplification, signal switching, signal conditioning, and data conversion. The DMN2011UFDE-13 has a wide range of dynamic operating ranges and excellent resistance to electrostatic discharge (ESD). It is also suited for use in high-performance applications due to its high breakdown voltage, low leakage current and low input capacitance.

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