Allicdata Part #: | DMN2990UDJQ-7-ND |
Manufacturer Part#: |
DMN2990UDJQ-7 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CHANNEL 450MA SOT963 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 450mA (Ta) Surfa... |
DataSheet: | DMN2990UDJQ-7 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07879 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 450mA (Ta) |
Rds On (Max) @ Id, Vgs: | 990 mOhm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 27.6pF @ 16V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SOT-963 |
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DMN2990UDJQ-7 Application Field and Working Principle
DMN2990UDJQ-7 is a product of the DMN2990 series of power MOSFET arrays manufactured by Danox Systems. It uses two power MOSFETs cascaded together as a single component, where each power MOSFET can operate as a switch, providing 8 different functions. This component can be applied in various applications, such as high-frequency inverters and DC/DC converters, and its working principle is determined by the quantum mechanical properties of the MOSFETs.
DMN2990UDJQ-7 Application Field
DMN2990UDJQ-7 power MOSFET array is suitable for high-frequency inverters and DC/DC converters. The components\' high-frequency operation capabilities provides better efficiency, as the power MOSFETs can quickly turn on and off according to the switching frequency. Using this component for high-frequency inverters helps produce higher output power, and its usage for DC/DC converters allows the converter to operate in a more energy-efficient manner.
DMN2990UDJQ-7 Working Principle
The working principle of DMN2990UDJQ-7 is mainly determined by the quantum mechanical properties of the MOSFETs. The two MOSFETs operate as switches depending on the applied voltage. When the supply voltage VD is lower than the threshold voltage VT, the conduction path is blocked, and the MOSFET operates as an open switch, reducing the current flow. On the other hand, when the voltage VD is greater than the threshold voltage VT, the conduction path is opened, and the MOSFET operates as a closed switch, allowing the current to flow.
The power MOSFET array further improves the performance of the power MOSFET by combining two MOSFETs together. This way, the power supply voltage can be shared between the two MOSFETs, decreasing the energy loss and further improving the efficiency. The gate resistors in the power MOSFET array improves the performance of the MOSFETs by reducing the input capacitance and improving the switching speed.
The DMN2990UDJQ-7 provides an efficient and reliable solution for high-frequency switch-mode power supplies. Its integrated gate resistors also help reduce the power demand, allowing the component to be used in a wide range of applications. It is an excellent choice for applications that require a higher power MOSFET, such as DC/DC converters and high-frequency inverters.
The specific data is subject to PDF, and the above content is for reference
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