Allicdata Part #: | DMN2050LFDB-13DITR-ND |
Manufacturer Part#: |
DMN2050LFDB-13 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 20V 3.3A 6UDFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 3.3A 730mW Sur... |
DataSheet: | DMN2050LFDB-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.09192 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 389pF @ 10V |
Power - Max: | 730mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type B) |
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DMN2050LFDB-13 Application Field and Working Principle
The DMN2050LFDB-13 is a silicon N-channel power MOSFET array that is designed for high current at low voltage. This type of device is usually utilized in a variety of applications, such as motor drivers and current limit circuits, as well as power supplies and solar cell arrays. It is available in a variety of package sizes and power ratings, from 3.2 V to 30 V.
Physical Description
The DMN2050LFDB-13 is a four-channel MOSFET array that has an integrated PWM and N-channel devices. It has three primary components: a power MOSFET, a gate driver, and a control circuit. The power MOSFET is the main component and is responsible for regulating current and controlling power output. It is constructed with a N-channel dielectric and the control circuit, a bipolar CMOS, is connected through the gate driver. The gate driver takes the control signal from the control circuit and converts it into the correct voltage level for the power MOSFET.
Working Principle
The DMN2050LFDB-13 utilizes a charge pump to drive the high power MOSFET. The charge pump takes the electric field that is created by the control circuit, which is connected to the gate of the power MOSFET, and pumps it up to the correct voltage level. This is done by taking the high current electric field and converting it into low voltage electric fields. The charge pump then uses this energy to increase the voltage on the gate of the MOSFET and turn it on.
Once the power MOSFET is turned on, the current flow is regulated by the control circuit. The control circuit monitors the load current, the load voltage, and the gate voltage, and adjusts the gate voltage as needed. This is done by using a voltage reference and comparator circuit. The comparator circuit compares the load and gate voltages and will turn the power MOSFET off when the voltage differences are too large. This prevents the power MOSFET from being over-driven and keeps the current at a safe level.
Applications
The DMN2050LFDB-13 is a popular choice for motor drivers and current limit circuits. It is also used in power supplies and solar cell arrays. The device is ideal for applications where low noise, low cost, and high reliability are essential. The device\'s robust design and low power consumption make it ideal for many applications.
Conclusion
The DMN2050LFDB-13 is a four-channel power MOSFET array that is designed for high current at low voltage applications. It utilizes a charge pump to drive the power MOSFET, and the control circuit to regulate the current flow. The device\'s compact size and low power consumption make it a popular choice for many applications, including motor drivers, current limit circuits, power supplies, and solar cell arrays.
The specific data is subject to PDF, and the above content is for reference
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