DMT6018LDR-13 Allicdata Electronics
Allicdata Part #:

DMT6018LDR-13-ND

Manufacturer Part#:

DMT6018LDR-13

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2 N-CH 60V 11.4A DFN3030
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 11.4A (Ta) 1.9...
DataSheet: DMT6018LDR-13 datasheetDMT6018LDR-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.14401
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: V-DFN3030-8
Description

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DMT6018LDR-13 transistors are among the most widely used components in various application fields, such as telecommunication, power electronics, automotive and consumer electronics. They are also known as Dual MOSFETs with Logic compatible drain. It is designed as a standard, highly integrated power switch that offers improved resistivity, electrical and thermal performance, and low RDS(on).

DMT6018LDR-13 transistors is a four-terminal device composed of two N-Channel MOSFETs and an OR gate. This combination allows two devices to be controlled by one gate voltage without separate gate drive. The gate output of the DMT6018LDR-13 is open drain and requires to be driven by an external pullup resistor. The OR gate operation combines the two MOSFETs as if they were connected in parallel and controlled by one single gate voltage, which allows more power to be switched than with a single MOSFET. Furthermore, the double channel device has between 3 and 4 times the on-state resistance of an individual device.

DMT6018LDR-13 features low RDS(on), high-speed switching and superior reliability. The device has been designed to withstand a maximum voltage rating of -60V and a continuous current rating of10A. It is also designed to handle power peaks up to 1.2KW and has excellent protection against reverse current and ESD protection. The thermally enhanced packaging is designed to dissipate the heat generated by the device, increasing its performance and reducing the possibility of thermal damage.

The working principle of the DMT6018LDR-13 is quite simple. When a gate voltage (VGS) is applied to the device, the MOSFETs turn on, allowing current to flow from the drain to the source. A higher gate voltage increases the on-state resistance of the MOSFETs, resulting in improved power efficiency. The level of the gate voltage determines the amount of current that can be passed through the device. When the gate voltage falls to zero, the MOSFETs turn off and the device is in the off state. In this case, no current can pass through the device.

The DMT6018LDR-13 is a powerful and versatile device that finds application in a variety of applications where a high-performance, low-RDS(on) switch is required. It is particularly well suited for power supply designs and applications involving high current switching and/or high voltage. The device is also used in automotive, telecommunication, and industrial applications.

In conclusion, the DMT6018LDR-13 transistor is a powerful and versatile device that finds application in a variety of applications. It offers excellent electrical and thermal performance due to its high-efficiency power switching and superior reliability. The device is designed to withstand a maximum voltage rating of -60V and a continuous current rating of 10A, making it suitable for power supply designs and applications involving high current switching and/or high voltage.

The specific data is subject to PDF, and the above content is for reference

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