
Allicdata Part #: | DMT6018LDR-13-ND |
Manufacturer Part#: |
DMT6018LDR-13 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 60V 11.4A DFN3030 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 11.4A (Ta) 1.9... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.14401 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Ta) |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 869pF @ 30V |
Power - Max: | 1.9W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | V-DFN3030-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DMT6018LDR-13 transistors are among the most widely used components in various application fields, such as telecommunication, power electronics, automotive and consumer electronics. They are also known as Dual MOSFETs with Logic compatible drain. It is designed as a standard, highly integrated power switch that offers improved resistivity, electrical and thermal performance, and low RDS(on).
DMT6018LDR-13 transistors is a four-terminal device composed of two N-Channel MOSFETs and an OR gate. This combination allows two devices to be controlled by one gate voltage without separate gate drive. The gate output of the DMT6018LDR-13 is open drain and requires to be driven by an external pullup resistor. The OR gate operation combines the two MOSFETs as if they were connected in parallel and controlled by one single gate voltage, which allows more power to be switched than with a single MOSFET. Furthermore, the double channel device has between 3 and 4 times the on-state resistance of an individual device.
DMT6018LDR-13 features low RDS(on), high-speed switching and superior reliability. The device has been designed to withstand a maximum voltage rating of -60V and a continuous current rating of10A. It is also designed to handle power peaks up to 1.2KW and has excellent protection against reverse current and ESD protection. The thermally enhanced packaging is designed to dissipate the heat generated by the device, increasing its performance and reducing the possibility of thermal damage.
The working principle of the DMT6018LDR-13 is quite simple. When a gate voltage (VGS) is applied to the device, the MOSFETs turn on, allowing current to flow from the drain to the source. A higher gate voltage increases the on-state resistance of the MOSFETs, resulting in improved power efficiency. The level of the gate voltage determines the amount of current that can be passed through the device. When the gate voltage falls to zero, the MOSFETs turn off and the device is in the off state. In this case, no current can pass through the device.
The DMT6018LDR-13 is a powerful and versatile device that finds application in a variety of applications where a high-performance, low-RDS(on) switch is required. It is particularly well suited for power supply designs and applications involving high current switching and/or high voltage. The device is also used in automotive, telecommunication, and industrial applications.
In conclusion, the DMT6018LDR-13 transistor is a powerful and versatile device that finds application in a variety of applications. It offers excellent electrical and thermal performance due to its high-efficiency power switching and superior reliability. The device is designed to withstand a maximum voltage rating of -60V and a continuous current rating of 10A, making it suitable for power supply designs and applications involving high current switching and/or high voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DMT6018LDR-7 | Diodes Incor... | 0.18 $ | 1000 | MOSFET BVDSS: 41V 60V V-D... |
DMT6009LSS-13 | Diodes Incor... | 0.3 $ | 7500 | MOSFET BVDSS: 41V 60V,SO-... |
DMT6012LSS-13 | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V8SOICN-Cha... |
DMT6002LPS-13 | Diodes Incor... | 0.6 $ | 1000 | MOSFET N-CH 60V 100A POWE... |
DMT6009LK3-13 | Diodes Incor... | 0.3 $ | 1000 | MOSFET BVDSS: 41V 60V TO2... |
DMT6D1K | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 1000PF 10% 630VD... |
DMT6018LDR-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET 2 N-CH 60V 11.4A D... |
DMT6007LFG-7 | Diodes Incor... | 0.34 $ | 2000 | MOSFET BVDSS: 41V 60V POW... |
DMT6009LPS-13 | Diodes Incor... | 0.34 $ | 1000 | MOSFET N-CHA 60V 10.6A PO... |
DMT6D47K-F | Cornell Dubi... | 0.83 $ | 897 | CAP FILM 4700PF 10% 630VD... |
DMT6017LSS-13 | Diodes Incor... | 0.19 $ | 1000 | MOSFET N-CHA 60V 9.2A SO8... |
DMT6005LSS-13 | Diodes Incor... | 0.5 $ | 1000 | MOSFET N-CHA 60V 13.5A SO... |
DMT6004LPS-13 | Diodes Incor... | 0.49 $ | 1000 | MOSFET N-CH 60V 22AN-Chan... |
DMT6015LFV-7 | Diodes Incor... | 0.16 $ | 1000 | MOSFET NCH 60V 9.5A POWER... |
DMT69M8LFV-7 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CH 60V 45A POWER... |
DMT6015LFV-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET NCH 60V 9.5A POWER... |
DMT6015LSS-13 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CHA 60V 9.2A SO8... |
DMT6009LCT | Diodes Incor... | 0.7 $ | 1000 | MOSFET N-CHA 60V 37.2A TO... |
DMT6015LPS-13 | Diodes Incor... | 0.27 $ | 1000 | MOSFET BVDSS: 41V 60V POW... |
DMT6010LSS-13 | Diodes Incor... | 0.42 $ | 1000 | MOSFET BVDSS: 41V 60V SO-... |
DMT6D33K-F | Cornell Dubi... | 0.74 $ | 2350 | CAP FILM 3300PF 10% 630VD... |
DMT6004SCT | Diodes Incor... | 1.51 $ | 44 | MOSFET N-CH 60V 100A TO22... |
DMT6016LPS-13 | Diodes Incor... | 0.18 $ | 12500 | MOSFET N-CH 60V 10.6A POW... |
DMT6010SCT | Diodes Incor... | 1.11 $ | 18 | MOSFET N-CHA 60V 98A TO22... |
DMT6P1K | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 0.1UF 10% 630VDC... |
DMT6010LPS-13 | Diodes Incor... | 0.32 $ | 1000 | MOSFET N-CH 60V 13.5AN-Ch... |
DMT6016LSS-13 | Diodes Incor... | 0.15 $ | 22500 | MOSFET N-CH 60V 9.2A 8-SO... |
DMT68M8LSS-13 | Diodes Incor... | 0.16 $ | 1000 | MOSFET N-CHANNEL 60V 28.9... |
DMT69M8LFV-13 | Diodes Incor... | 0.21 $ | 1000 | MOSFET N-CH 60V 45A POWER... |
DMT6010LFG-13 | Diodes Incor... | 0.26 $ | 1000 | MOSFET N-CH 60V 13A POWER... |
DMT6008LFG-7 | Diodes Incor... | 0.22 $ | 1000 | MOSFET N-CH 60V 13A PWDI3... |
DMT6P1K-F | Cornell Dubi... | 0.0 $ | 1000 | CAP FILM 0.1UF 10% 630VDC... |
DMT6005LPS-13 | Diodes Incor... | 0.35 $ | 2500 | MOSFET N-CHA 60V 17.9A PO... |
DMT6009LFG-7 | Diodes Incor... | 0.34 $ | 4000 | MOSFET N-CH 60V 11AN-Chan... |
DMT69M8LSS-13 | Diodes Incor... | 0.26 $ | 1000 | MOSFET BVDSS: 41V 60V,SO-... |
DMT6005LCT | Diodes Incor... | 1.11 $ | 1000 | MOSFET NCH 60V 100A TO220... |
DMT6012LPS-13 | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V POWERDI |
DMT6016LFDF-7 | Diodes Incor... | 0.16 $ | 15000 | MOSFET N-CH 60V 8.9A 6UDF... |
DMT6010LFG-7 | Diodes Incor... | 0.22 $ | 1000 | MOSFET N-CH 60V 13A POWER... |
DMT69M8LPS-13 | Diodes Incor... | 0.35 $ | 1000 | MOSFET N-CHA 60V 10.2A PO... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
