Allicdata Part #: | DMT69M8LFV-7-ND |
Manufacturer Part#: |
DMT69M8LFV-7 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 45A POWERDI3333 |
More Detail: | N-Channel 60V 45A (Tc) 42W (Tc) Surface Mount Powe... |
DataSheet: | DMT69M8LFV-7 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.18909 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1925pF @ 30V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 33.5nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT69M8LFV-7 is an advanced single Enhancement Mode (normally-off) Power Field Effect Transistor (FET). It is designed for use in power management, switching, and level-shift applications with supply voltages up to 100V. This device is offered in a standard N-channel configuration and comes in a DPAK package.
The DMT69M8LFV-7 is an excellent choice for switching and power management applications where current and power capabilities are needed. It is ideal for use in a wide range of applications such as automotive, communication equipment, computer, industrial and consumer electronics.
The DMT69M8LFV-7 uses an enhancement mode design, which means that it is a normally-off transistor. This feature makes it ideal for applications where load switching is required without the need for a high voltage gate driver. The device has a typical Drain-Source on-resistance (RDS(on)) of 39mΩ which provides excellent efficiency for power management and switching applications.
The DMT69M8LFV-7 is capable of handling high current levels and tolerates high pulse currents up to 10A. It has a maximum voltage rating of 100V, which makes it suitable for use in a wide range of applications. The device has a high maximum temperature rating of 175°C, and is RoHS compliant.
The working principle of the DMT69M8LFV-7 is that when the voltage at the gate terminal is greater than the voltage at the source terminal, the device will be ‘on’ and allow current to pass through it. This is known as the enhancement mode because it allows the device to turn on when a voltage is applied to the gate terminal. When the gate voltage is lower than the source voltage, the device will be ‘off’ and the current will not flow.
The DMT69M8LFV-7 is designed for use in power management, switching, and level-shift applications. It can be used as a switch for controlling power or as an amplifier for signal conditioning. It can also be used for voltage level shifting and as a linear regulator for providing a regulated output voltage.
The DMT69M8LFV-7 is a high-performance single Enhancement Mode Power FET. It is capable of handling high current levels, has a low on-resistance, and a high temperature rating, making it an ideal choice for use in power management and switching applications.
The specific data is subject to PDF, and the above content is for reference
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