DMT6015LFV-13 Allicdata Electronics
Allicdata Part #:

DMT6015LFV-13-ND

Manufacturer Part#:

DMT6015LFV-13

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 60V 9.5A POWERDI
More Detail: N-Channel 60V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (...
DataSheet: DMT6015LFV-13 datasheetDMT6015LFV-13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.14823
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMT6015LFV-13 is a type of discrete MOSFETs (metal-oxide-semiconductor field-effect transistors) and is a part of NXP’s NexFET technology. DMT6015LFV-13 is a N-channel MOSFET device for applications such as power supply and motor control, operation and lighting. It is designed to be an efficient, low RDS(on) device, making it suitable for applications with high current demands.

An important part of understanding the performance of a MOSFET is understanding the underlying physics of its operation, which can be broken down into three basic principles: electric field effect, gate control and electric current control. The electric field effect principle is at the heart of MOSFET operation. It is the interaction between an electric field and the free electrons and holes of a semiconductor material that is used to control the flow of current through a MOSFET device. The gate control principle is based on the fact that an applied electric field can be used to modify the electric field in the device, which in turn affects the electric current in the device. Finally, the electric current control principle is used to control the current flowing through the device, by changing the magnitude of the applied electric field.

The DMT6015LFV-13 MOSFET operates using these three basic principles, and is designed for use in a variety of applications. As its N channel device, it can be used for high speed switching, low voltage logic level applications, and many other power conversion functions. It is also useful in applications that require low input capacitance and a low on-resistance, such as motor control and lighting applications. The device is ideal for applications where power efficiency and low power loss is important. It can also be used to provide high current switching for high power loads, such as electric vehicles and battery powered equipment.

The DMT6015LFV-13 MOSFET is suited for a wide range of applications due to its excellent power handling capabilities, its low on-resistance, and its small size. Its low RDS(on) makes it highly efficient, and its ability to handle high currents make it ideal for power switching applications. Additionally, because it is a small device, it can be used in space-constrained applications, such as portable devices. The device is also a good fit for applications where high speed switching is necessary, such as switching power supplies, motor control, and lighting applications.

In conclusion, the DMT6015LFV-13 MOSFET is a powerful and efficient discrete device that can be used in a variety of applications. It operates by using the principles of electric field effect, gate control, and electric current control, and is suitable for applications requiring high current and power efficiency. Additionally, its small size makes it a good choice for space-constrained applications. DMT6015LFV-13 is an excellent choice for applications in power supply and motor control, operation, and lighting.

The specific data is subject to PDF, and the above content is for reference

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