
DMT6010LFG-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMT6010LFG-7DITR-ND |
Manufacturer Part#: |
DMT6010LFG-7 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 13A POWERDI |
More Detail: | N-Channel 60V 13A (Ta), 30A (Tc) 2.2W (Ta), 41W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.21011 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT6010LFG-7 is a field-effect transistor (FET) which is specifically designed to be used in a wide range of applications. It features a single, vertically-mounted control electrode, a low-capacitance construction, and minimal power losses. In addition, it is highly reliable and offers excellent power handling capabilities.
At its core, the DMT6010LFG-7 is a type of single field-effect transistor (FET) known as a Metal-Oxide-Semiconductor FET (MOSFET). It has a single, vertically-mounted control electrode which is placed between two dielectric layers.
The entire device is formed in an electrostatic field, with a voltage applied across the gates. As with any FET, the device can be used either as a switch or an amplifier. In the former case, it serves to open and close circuits; in the latter, it is used to provide voltage, current, or frequency gain.
The DMT6010LFG-7 is primarily used in radio frequency (RF) applications and power amplifiers. Its low-capacitance construction facilitates the frequencies at which it can operate, allowing it to reach a higher level of performance. In addition, the reduced power losses mean that the device can provide superior efficiency and power handling.
The DMT6010LFG-7 can also be used in other types of applications, such as switches and heat pumps. The fact that it requires only minimal power to operate makes it ideal for low-power devices, such as portable radios or phones.
The DMT6010LFG-7 is generally preferred over other FETs due to its high reliability and durable construction. This is due to the fact that the thermal stability of the device is quite high. Additionally, the device’s current-carrying capabilities are extremely impressive, with its peak current reaching up to 10 amperes.
In conclusion, the DMT6010LFG-7 is an excellent choice for RF applications and power amplifiers, offering low-capacitance construction, minimal power losses, and high reliability. It can also be used in a variety of other applications, such as switches and heat pumps, as its current-carrying capabilities and thermal stability are unrivaled.
The specific data is subject to PDF, and the above content is for reference
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